Improving atomic ordering in iron platinum magnetic film by suppressing grain growth by rapid thermal annealing with a high heating ramp rate

2016 ◽  
Vol 616 ◽  
pp. 183-187 ◽  
Author(s):  
Ali Ghasemi
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Magnetic Film ◽  
Atomic Ordering ◽  
Ramp Rate ◽  
Iron Platinum ◽  
High Heating

Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
K.Y. Lee ◽  
S.L. Liew ◽  
S.J. Chua ◽  
D.Z. Chi ◽  
H.P. Sun ◽  
...  
Keyword(s):  
Grain Growth ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Microstructure Evolution ◽  
Interfacial Microstructure ◽  
Morphology Evolution ◽  
Smooth Interface ◽  
Substrate Side ◽  
Nickel Germanides

ABSTRACTPhase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.

Secondary Grain Growth in Heavily Doped Polysilicon During Rapid Thermal Annealing

1991 ◽  
Vol 230 ◽  
Author(s):  
S. Batra ◽  
K. Park ◽  
M. Lobo ◽  
S. Banerjee
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon On Insulator ◽  
Active Devices ◽  
Drastic Increase ◽  
Heavily Doped ◽  
Soi Technology

AbstractTo successfully implement Silicon-on-Insulator (SOI) technology using polysilicon-on-oxide, it is necessary to maximize the grain size such that the active devices are entirely within very large single crystal grains. A drastic increase in grain size in polysilicon has been reported due to secondary grain growth in ultra-thin, heavily n-type doped films upon regular furnace annealing. Very little work has been undertaken, however, to study secondary grain growth during Rapid Thermal Annealing (RTA).This paper is a study of the grain growth mechanism in heavily P-doped, amorphous silicon films during RTA. Secondary grains as large as 16 μm have been obtained in 160 nm thick films after a 180 s RTA at 1200 °C, representing a grainsize- to-film-thickness-ratio of 100:1. This is the largest secondary grain size and grain-size-to-film-thickness reported in the literature. A detailed analysis of negatively charged silicon vacancies has also been employed to explain the lower activation energy (1.55 eV) of secondary grain growth compared to that of normal grain growth (2.4 eV).

Secondary Grain Growth During Rapid Thermal Annealing of Doped Polysilicon Films

1987 ◽  
Vol 92 ◽  
Author(s):  
R. C. Cammarata ◽  
C. V. Thompson ◽  
S. M. Garrison
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Substrates ◽  
Solid Phase Epitaxy ◽  
Polysilicon Films ◽  
Heavily Doped ◽  
Grain Growth Behavior ◽  
Short Times

ABSTRACTRecently there has been a great deal of interest in the use of thin (≤0.1µm) heavily doped polysilicon films as diffusion sources for shallow junctions in silicon substrates. It has been reported that grain growth and solid phase epitaxy occur during annealing of such films and that the apparent rates of both are much greater during rapid thermal annealing. We report similar grain growth behavior for rapid thermal annealed thin polysilicon films deposited onto amorphous SiO2. Based on these experimental results we propose that solid phase homoepitaxy in polysilicon films occurs via secondary grain growth. This process proceeds rapidly at first but slows down due to grain boundary drag. Rapid thermal annealing of polysilicon films provides a method for selectively utilizing the kinetic process that dominates for short times.

Surface‐energy‐driven grain growth during rapid thermal annealing (<10 s) of thin silicon films

1987 ◽  
Vol 61 (4) ◽  
pp. 1652-1655 ◽  
Author(s):  
S. M. Garrison ◽  
R. C. Cammarata ◽  
C. V. Thompson ◽  
Henry I. Smith
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Films ◽  
Thin Silicon

Preparation and Magnetic Properties Studies of Granular FePt Composite Films for High-Density Magnetic Recording

2009 ◽  
Vol 79-82 ◽  
pp. 855-858
Author(s):  
S.C. Chen ◽  
T.H. Sun ◽  
T.Y. Kuo ◽  
Po Cheng Kuo
Keyword(s):  
Composite Films ◽  
Domain Size ◽  
Magnetic Film ◽  
Magnetic Domains ◽  
Ramp Rate ◽  
Media Noise ◽  
Atomic Force ◽  
Nanocomposite Thin Films ◽  
High Heating ◽  
High Density Magnetic Recording

Granular (FePt)100-x–(NiO)x nanocomposite thin films with x in the range of 0 – 42 vol.% were fabricated on a natural-oxidized Si(100) substrate. It is found that both the coercivity and FePt domain size decrease with increasing NiO content for the (FePt)100-x–(NiO)x films. When the FePt-NiO nanocomposite film with NiO content of 10.4 vol.% is post-annealed at 750 °C with a high heating ramp rate of 100 °C/sec, the in-plane coercivity (Hc//) and perpendicular coercivity (Hc⊥) of the FePt films are 6.4 and 5.5 kOe, respectively. On the other hand, we used conductive atomic force microscope (CAFM) to confirm that the NiO compound is distributed at grain boundary of FePt grain that will constrain the domain size of FePt and obtain isolated magnetic domains. These results indicate that NiO addition is beneficial to enhance recoding density and reduce media noise of the FePt magnetic film.

Magnetic Properties of Single-Layered Fe100-xPtx Films by Rapid Thermal Annealing

2010 ◽  
Vol 123-125 ◽  
pp. 723-726
Author(s):  
Chih Long Shen ◽  
T.H. Sun ◽  
C.L. Chang ◽  
S.C. Chen ◽  
G.P. Lin ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Recording Media ◽  
Ramp Rate ◽  
Fept Film ◽  
Out Of Plane ◽  
High Density Recording ◽  
X 32

Fe100-xPtx single-layered films with Pt contents (x) = 32~69 at.% were deposited on natural-oxidized Si(100) substrate by dc magnetron sputtering. Then the films were post-annealed at 700 °C for 3 min by a rapid thermal annealing (RTA) with a high heating ramp rate of 100 °C/sec. Experimental results show that FePt film presented (111) preferred orientation and tended to in-plane magnetic anisotropy as the content of Pt was 32 at.%. When the Pt content was increased to 55 at.%, (001)-textured FePt film was obtained and presented perpendicular magnetic anisotropy. Its out-of-plane coercivity (Hc⊥), saturation magnetization (Ms) and out-of-plane squareness (S⊥) reached to 12.7 kOe, 375 emu/cm3 and 0.8, respectively. These results reveal its significant potential as perpendicular magnetic recording media for high-density recording. Further increasing the Pt content to 69 at.%, the coercivity of FePt film was decreased drastically to below 1 kOe and tended towards in-plane magnetic anisotropy.

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