Structural characterization of thin amorphous Si films

2007 ◽  
Vol 515 (14) ◽  
pp. 5620-5623 ◽  
Author(s):  
D. Grozdanić ◽  
B. Rakvin ◽  
B. Pivac ◽  
P. Dubček ◽  
N. Radić ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Amorphous Si ◽  
Si Films

Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si

2016 ◽  
Vol 119 (6) ◽  
pp. 065303 ◽  
Author(s):  
G. Z. Radnóczi ◽  
E. Dodony ◽  
G. Battistig ◽  
N. Vouroutzis ◽  
P. Kavouras ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Amorphous Si ◽  
Lateral Crystallization

Characterization and PL Properties of Ge-Induced Crystallization of a-Si Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 366 ◽  
pp. 99-102 ◽  
Author(s):  
Kun Yong Kang ◽  
Shu Kang Deng ◽  
Rui Ting Hao ◽  
De Cong Li
Keyword(s):  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Atomic Force ◽  
Result Show ◽  
Spectrum Band ◽  
Amorphous Si ◽  
Pl Spectrum ◽  
Si Films ◽  
Induced Crystallization

In this paper, we present the characterization of Ge-induced crystallization of amorphous Si (a-Si) films deposited by magnetron sputtering. The film structures of a-Si films were characterized by Raman spectroscopy, Atomic Force microscope (AFM), and field emission scanning electron microscope (FESEM). The result show that 60% of a-si film with a layer of 400 nm Ge buried is crystallized at growth temperature of 800 °C. The surface roughness and average surface grain size obtained by AFM is 2.39 nm and 60 nm for the crystallized film, respectively. The films growth at temperature of 500°C and 650 °C shows a PL spectrum band from 1.6 eV to 1.8 eV, and the PL peak shifts to lower energy as the growth temperature increased. As for the film grown at 800 °C, the PL spectrum is nearly extinguished. The crystallization of a-Si film induced by buried Ge might be a useful technology to develop high quality poly-Si film without annealing.

scholarly journals Structural characterization of poly-Si Films crystallized by Ni Metal Induced Lateral Crystallization

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
N. Vouroutzis ◽  
J. Stoemenos ◽  
N. Frangis ◽  
G. Z. Radnóczi ◽  
D. Knez ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Lateral Crystallization ◽  
Si Films

Structural Characterization of Laser-Annealed Sputtered Poly-Si Films for High Mobility Tfts

1990 ◽  
Vol 202 ◽  
Author(s):  
Akio Okamoto ◽  
Seiiti Shirai ◽  
Shiro Suyama ◽  
Tadashi Serikawa
Keyword(s):  
Structural Characterization ◽  
Crystal Orientation ◽  
High Mobility ◽  
Structural Difference ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputtered Films ◽  
Fine Grain ◽  
Si Films

ABSTRACTA high mobility of 390 cm2/Vs was successfully obtained for sputtered films, compared with 100 cm2/Vs for CVD films. Then, structural characterization of laser-annealed sputtered silicon films were performed, and compared with that of CVD films. TEM observations show a structural difference between the two film types. In sputtered films, many fine grain-like regions which have slightly different crystal orientation from surrounding regions are observed. On the other hand, in the CVD films, defects are widely spread over the film. X-ray diffraction, Raman scattering, and SIMS yield almost the same results in both films. The above-mentioned structural difference is thought to be essential to obtain high mobility.

Structural characterization of α-Si films crystallized by combined furnace and laser annealing

1997 ◽  
Vol 182 (3-4) ◽  
pp. 341-351 ◽  
Author(s):  
S. Friligkos ◽  
V. Papaioannou ◽  
J. Stoemenos ◽  
R. Carluccio ◽  
S. Cina ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Laser Annealing ◽  
Si Films

Fabrication and characterization of amorphous Si films by PECVD for MEMS

2004 ◽  
Vol 15 (1) ◽  
pp. 136-142 ◽  
Author(s):  
Chen-Kuei Chung ◽  
Ming-Qun Tsai ◽  
Po-Hao Tsai ◽  
Chiapyng Lee
Keyword(s):  
Fabrication And Characterization ◽  
Amorphous Si ◽  
Si Films

Structural characterization of nc-Si films grown by low-energy PECVD on different substrates

2008 ◽  
Vol 254 (9) ◽  
pp. 2804-2808 ◽  
Author(s):  
A. Le Donne ◽  
S. Binetti ◽  
G. Isella ◽  
B. Pichaud ◽  
M. Texier ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Low Energy ◽  
Si Films

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

New ultrastructural findings about Borrelia burgdorferi by cryofixation, negative staining, thin sectioning and scanning techniques

1990 ◽  
Vol 48 (3) ◽  
pp. 582-583
Author(s):  
S. F. Hayes ◽  
M. D. Corwin ◽  
T. G. Schwan ◽  
D. W. Dorward ◽  
W. Burgdorfer
Keyword(s):  
Lyme Disease ◽  
Borrelia Burgdorferi ◽  
Structural Characterization ◽  
Negative Staining ◽  
Low Speed ◽  
Thin Sectioning ◽  
Ultrastructural Findings

Characterization of Borrelia burgdorferi strains by means of negative staining EM has become an integral part of many studies related to the biology of the Lyme disease organism. However, relying solely upon negative staining to compare new isolates with prototype B31 or other borreliae is often unsatisfactory. To obtain more satisfactory results, we have relied upon a correlative approach encompassing a variety EM techniques, i.e., scanning for topographical features and cryotomy, negative staining and thin sectioning to provide a more complete structural characterization of B. burgdorferi.For characterization, isolates of B. burgdorferi were cultured in BSK II media from which they were removed by low speed centrifugation. The sedimented borrelia were carefully resuspended in stabilizing buffer so as to preserve their features for scanning and negative staining. Alternatively, others were prepared for conventional thin sectioning and for cryotomy using modified procedures. For thin sectioning, the fixative described by Ito, et al.

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