Structural characterization of nc-Si films grown by low-energy PECVD on different substrates

2008 ◽  
Vol 254 (9) ◽  
pp. 2804-2808 ◽  
Author(s):  
A. Le Donne ◽  
S. Binetti ◽  
G. Isella ◽  
B. Pichaud ◽  
M. Texier ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Low Energy ◽  
Si Films

scholarly journals Electrospray Tandem Mass Spectrometry of 3'-azido-2',3'dideoxythymidine and of a Novel Series of 3'-azido-2',3',4'-trideoxy-4'thio-5-halogenouridines and their Respective α-Anomers

1994 ◽  
Vol 12 (2) ◽  
pp. 69-83 ◽  
Author(s):  
Joseph Banoub ◽  
Emmanuel Gentil ◽  
Bougrine Tber ◽  
Nour-Eddine Fahmi ◽  
Gino Ronco ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Tandem Mass Spectrometry ◽  
Structural Characterization ◽  
Electrospray Mass Spectrometry ◽  
Low Energy ◽  
Tandem Mass ◽  
The Novel ◽  
Electrospray Tandem Mass Spectrometry ◽  
Protonated Molecules

Electrospray mass spectrometry has aided the structural characterization of 3'-azido-2',3'-dideoxythymidine (AZI) and the novel series of 3'-azido-2',3',4'trideoxy-4'-thio-S-(bromo, chi oro or fluoro )uridine nucleosides and their respective α.anomers. Low energy CAD MS/MS analysis of the protonated molecules [M+H]+confmned the predicted fragmentation route for AZT and a series of related 4'-thio-S-halogenouridines. This MSIMS study also provided characteristic fingerprint patterns which permitted differentiation of anomers within the series of 3'-azido-2' ,3' ,4' -trideoxy-4' -thio-S-halogenouridine nucleosides.

Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods

2006 ◽  
Vol 39 (4) ◽  
pp. 571-581 ◽  
Author(s):  
L. Capello ◽  
T. H. Metzger ◽  
V. Holý ◽  
M. Servidori ◽  
A. Malachias
Keyword(s):  
Structural Characterization ◽  
Bragg Reflection ◽  
Complete Characterization ◽  
Low Energy ◽  
Diffuse Intensity ◽  
Near Surface ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

The use of a combination of X-ray scattering techniques for the complete characterization of ultra-low-energy (E< 5 keV) implanted Si is discussed. Grazing incidence diffuse X-ray scattering (GI-DXS) reveals the properties of the defects confined within thin crystalline layers with depth resolution. Due to the weak diffuse intensity arising from such defects, the high brilliance of synchrotron radiation is required. GI-DXS proved to be particularly well suited for the investigation of the so-called `end-of-range' defects. In a complementary way, X-ray diffraction (XRD) in the vicinity of the 004 Bragg reflection is sensitive to the distribution of the strain in the Si lattice in the direction perpendicular to the sample surface. The structural characterization is complemented by the electron density profile of the near-surface amorphous region provided by specular reflectivity (SR). It will be shown that only by merging the results obtained with GI-DXS, XRD and SR, is it possible to obtain the detailed structural characterization of the implanted Si samples.

scholarly journals Structural characterization of poly-Si Films crystallized by Ni Metal Induced Lateral Crystallization

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
N. Vouroutzis ◽  
J. Stoemenos ◽  
N. Frangis ◽  
G. Z. Radnóczi ◽  
D. Knez ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Lateral Crystallization ◽  
Si Films

Structural Characterization of Laser-Annealed Sputtered Poly-Si Films for High Mobility Tfts

1990 ◽  
Vol 202 ◽  
Author(s):  
Akio Okamoto ◽  
Seiiti Shirai ◽  
Shiro Suyama ◽  
Tadashi Serikawa
Keyword(s):  
Structural Characterization ◽  
Crystal Orientation ◽  
High Mobility ◽  
Structural Difference ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputtered Films ◽  
Fine Grain ◽  
Si Films

ABSTRACTA high mobility of 390 cm2/Vs was successfully obtained for sputtered films, compared with 100 cm2/Vs for CVD films. Then, structural characterization of laser-annealed sputtered silicon films were performed, and compared with that of CVD films. TEM observations show a structural difference between the two film types. In sputtered films, many fine grain-like regions which have slightly different crystal orientation from surrounding regions are observed. On the other hand, in the CVD films, defects are widely spread over the film. X-ray diffraction, Raman scattering, and SIMS yield almost the same results in both films. The above-mentioned structural difference is thought to be essential to obtain high mobility.

Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition

2003 ◽  
Vol 32 (9) ◽  
pp. 976-980 ◽  
Author(s):  
Shawn G. Thomas ◽  
Sushil Bharatan ◽  
Robert E. Jones ◽  
Rainer Thoma ◽  
Thomas Zirkle ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Characterization ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Energy ◽  
High Quality ◽  
Si Substrates

Structural characterization of α-Si films crystallized by combined furnace and laser annealing

1997 ◽  
Vol 182 (3-4) ◽  
pp. 341-351 ◽  
Author(s):  
S. Friligkos ◽  
V. Papaioannou ◽  
J. Stoemenos ◽  
R. Carluccio ◽  
S. Cina ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Laser Annealing ◽  
Si Films

Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

2003 ◽  
Vol 105 (1-3) ◽  
pp. 179-183
Author(s):  
M Mamor ◽  
B Pipeleers ◽  
F.D Auret ◽  
J Maes ◽  
M Hayne ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Low Energy
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