Microstructural Characterization of Polycrystalline Si Films Grown by Vapor-Induced Crystallization of Amorphous Si Using Al∕Ni Chloride

2007 ◽  
Vol 154 (3) ◽  
pp. H194 ◽  
Author(s):  
Ji Hye Eom ◽  
Kye Ung Lee ◽  
Byung Tae Ahn
Keyword(s):  
Microstructural Characterization ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

Characterization and PL Properties of Ge-Induced Crystallization of a-Si Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 366 ◽  
pp. 99-102 ◽  
Author(s):  
Kun Yong Kang ◽  
Shu Kang Deng ◽  
Rui Ting Hao ◽  
De Cong Li
Keyword(s):  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Atomic Force ◽  
Result Show ◽  
Spectrum Band ◽  
Amorphous Si ◽  
Pl Spectrum ◽  
Si Films ◽  
Induced Crystallization

In this paper, we present the characterization of Ge-induced crystallization of amorphous Si (a-Si) films deposited by magnetron sputtering. The film structures of a-Si films were characterized by Raman spectroscopy, Atomic Force microscope (AFM), and field emission scanning electron microscope (FESEM). The result show that 60% of a-si film with a layer of 400 nm Ge buried is crystallized at growth temperature of 800 °C. The surface roughness and average surface grain size obtained by AFM is 2.39 nm and 60 nm for the crystallized film, respectively. The films growth at temperature of 500°C and 650 °C shows a PL spectrum band from 1.6 eV to 1.8 eV, and the PL peak shifts to lower energy as the growth temperature increased. As for the film grown at 800 °C, the PL spectrum is nearly extinguished. The crystallization of a-Si film induced by buried Ge might be a useful technology to develop high quality poly-Si film without annealing.

Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films

1993 ◽  
Vol 321 ◽  
Author(s):  
H. J. Kim ◽  
James S. Im
Keyword(s):  
Excimer Laser ◽  
Single Pulse ◽  
Pulse Irradiation ◽  
Multiple Pulse ◽  
Melting Phenomenon ◽  
Irradiation Energy ◽  
Crystallization Experiments ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

ABSTRACTWe have experimentally Investigated the effects that are associated with Multiple-pulse irradiation in the excimer laser processing of thin Si films on SiO2. Double-pulse irradiation experiments revealed results, which are consistent with that which is known from single-pulse crystallization experiments, and these experiments confirm the applicability of the transformation scenarios, which were derived from single pulse-induced crystallization experiments [1,2]. The results from the Multiple-pulse irradiation experiments clearly show that gradual and substantial grain enlargement can occur — and only occurs — when the irradiation energy density is close to but less than the level that is required to melt the film completely. Based on these findings, we argue that the grain enlargement effect is a near-complete melting phenomenon that is associated with polycrystalline Si films, and we present a grain boundary melting model to account for this phenomenon. A brief discussion on the apparent similarities and physical differences between the observed phenomenon and the solid state grain growth processes is provided herein.

Metal-induced crystallization of hydrogenated amorphous Si films

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 953-955 ◽  
Author(s):  
C.C. Tsai ◽  
R.J. Nemanich ◽  
M.J. Thompson ◽  
B.L. Stafford
Keyword(s):  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Stress Effects on Nanocrystal Formation by Ni-Induced Crystallization of Amorphous Si

2003 ◽  
Vol 762 ◽  
Author(s):  
Yaocheng Liu ◽  
Michael D. Deal ◽  
Mahmooda Sultana ◽  
James D. Plummer
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Crystallization Rate ◽  
Chemical Vapor ◽  
Sputtering Deposition ◽  
Si Nanocrystals ◽  
Pressure Chemical ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

AbstractMetal-induced crystallization (MIC) of amorphous Si is gaining increased interest because of its potential use for low-temperature fabrication of integrated circuits. In this work, the MIC technique was used to make Si nanocrystals and the effects of stress on the crystallization were studied. Amorphous Si films were deposited onto the Si substrate with thermal oxides on top by low-pressure chemical vapor deposition (LPCVD) and then patterned into nanoscale pillars by electron beam lithography and reactive ion etching. A conformal low-temperature oxide (LTO) layer was deposited to cover the pillars, followed by an anisotropic etch back to form a spacer, leaving only the top surface of the pillars exposed to the 5 nm Ni sputtering deposition afterwards. An HF dip was used to partially remove the LTO spacers on the pillars, leading to different LTO thicknesses on different samples. These samples were then annealed to crystallize the amorphous Si pillars, forming Si nanocrystals. Transmission electron microscope (TEM) observations after anneal found a clear dependence of the crystallization rate on the pillar size as well as the LTO thickness. The crystallization rate was lower for pillars with thicker LTO spacers, while for the same LTO thickness the crystallization rate was lower for pillars with narrower width. A model based on the stress in the pillars is proposed to explain this dependence. This model suggests some methods to control the nickel-induced crystallization process and achieve higher quality Si nanocrystals.

Microstructural characterization of oxygen-implanted poly-Si layers

1991 ◽  
Vol 49 ◽  
pp. 892-893
Author(s):  
N. David Theodore ◽  
WenLing M. Huang
Keyword(s):  
Cross Section ◽  
Microstructural Characterization ◽  
Dark Field ◽  
Rapid Thermal Anneal ◽  
Bright Field ◽  
Plan View ◽  
Transmission Electron ◽  
Microstructural Behavior ◽  
Si Films

Poly-Si layers were evaluated that had been exposed to varying doses of oxygen-implant prior to an anneal. The layers were doped (by implantation) with arsenic. Oxygen implantation was found to modify the conductivity of the doped poly-Si films. The microstructural behavior of the films was of interest (as potentially enabling explanation of the modified conductivity).The oxygen implant doses investigated in this study were 1E14 and 1E16 cm-2. The arsenic dose used (dopant incorporated by implantation) was 1.3E13 cm-2. The oxygen-implantedpoly-Si layers were annealed (rapid-thermal anneal, “RTA“) at 1050°C for 30 seconds. Cross-section TEM specimens were prepared in the 110 substrate-geometry, and plan-view TEM specimens in the 100 substrate-geometry. These were then analyzed using selected-area diffraction, bright-field, and dark-field images under gradually varying conditions of electron-beam tilt. A JEOL JEM 200CX transmission electron microscope was used for analysis, operating at 200 kV.

Optically Assisted Metal-Induced Crystallization of Thin Si Films for Low-Cost Solar Cells

2001 ◽  
Vol 685 ◽  
Author(s):  
Wei Chen ◽  
Bhushan Sopori ◽  
Kim Jones ◽  
Robert Reedy ◽  
N. M. Ravindra ◽  
...  
Keyword(s):  
Grain Orientation ◽  
Deposition Temperature ◽  
Crystallization Front ◽  
Low Cost ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

AbstractOptically assisted, metal induced crystallization (MIC) was used to convert amorphous Si films, deposited on Al coated glass substrates, into polycrystalline Si (pc-Si). The study investigated the effects of deposition temperature, process temperature, and film thickness on the grain orientation, grain size, and crystallization front of the processed films. Furthermore, we have attempted to examine the role of Al in MIC – in particular, whether the metal can be confined to the interface while grain enhancement occurs.

Directed Crystallization of Amorphous Silicon Deposits on Glass Substrates

2007 ◽  
Vol 26-28 ◽  
pp. 623-628 ◽  
Author(s):  
Dong Nyung Lee
Keyword(s):  
Annealing Temperature ◽  
Chemical Vapor ◽  
Film Plane ◽  
Directed Crystallization ◽  
Random Orientation ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

Amorphous Si films are generally deposited on glass by physical or chemical vapor deposition. When annealed, they undergo crystallization through nucleation and grain growth. At low annealing temperatures, crystallization starts near the glass substrates for pure Si films and near metals for metal-induced crystallization. In this case, crystallites grow along the <111> directions of c-Si nearly parallel to the film plane, that is, the directed crystallization. The directed crystallization is likely to develop the <110> or <111> orientation, which means the <110> or <111> directions are along the film thickness direction. As the annealing temperature increases, equiaxed crystallization tends to increase, which in turn increases random orientation. When the annealing temperature is further increased, the <111> orientation may be obtained.

Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

2013 ◽  
Vol 652-654 ◽  
pp. 1765-1768
Author(s):  
Xiao Lei Qu ◽  
Jing Jin ◽  
Wei Min Shi ◽  
Yu Feng Qiu ◽  
Lu Huang ◽  
...  
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Amorphous Silicon ◽  
Spin Coating ◽  
Annealing Process ◽  
Crystalline Fraction ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

A viscous Nickel (Ni) solution was applied on amorphous Si films by spin coating and its effect on the crystallization of amorphous Si films was investigated with a two-step annealing process. The experimental results show that with the help of the two-step annealing, the crystallization of the film can take place at 500oC. At the same time, the crystalline fraction gets up to 79.4% after annealing at a high temperature of 520oC and the grain size of the polycrystalline Si films is approximately 200 nm.

Fabrication and characterization of amorphous Si films by PECVD for MEMS

2004 ◽  
Vol 15 (1) ◽  
pp. 136-142 ◽  
Author(s):  
Chen-Kuei Chung ◽  
Ming-Qun Tsai ◽  
Po-Hao Tsai ◽  
Chiapyng Lee
Keyword(s):  
Fabrication And Characterization ◽  
Amorphous Si ◽  
Si Films

Structural characterization of thin amorphous Si films

2007 ◽  
Vol 515 (14) ◽  
pp. 5620-5623 ◽  
Author(s):  
D. Grozdanić ◽  
B. Rakvin ◽  
B. Pivac ◽  
P. Dubček ◽  
N. Radić ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Amorphous Si ◽  
Si Films
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