Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAlO3 high-k dielectrics for flash memory device application

2006 ◽  
Vol 513 (1-2) ◽  
pp. 182-186 ◽  
Author(s):  
X.B. Lu ◽  
P.F. Lee ◽  
J.Y. Dai
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Device Application ◽  
High K ◽  
Memory Characteristics ◽  
Ge Nanocrystals

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

SELF-CONSISTENT SIMULATION OF QUANTUM DOT FLASH MEMORY DEVICE WITH SiO2 AND HfO2 DIELECTRICS

2005 ◽  
Vol 04 (02) ◽  
pp. 171-178
Author(s):  
CHEE CHING CHONG ◽  
KAI HONG ZHOU ◽  
PING BAI ◽  
ER PING LI ◽  
GANESH S. SAMUDRA
Keyword(s):  
Quantum Dot ◽  
Flash Memory ◽  
Gate Dielectric ◽  
Tunneling Current ◽  
Memory Device ◽  
Device Structure ◽  
Dielectric Thickness ◽  
Silicon Quantum Dot ◽  
High K ◽  
Self Consistent

Flash memory structure in which a silicon quantum dot embedded in the gate dielectric region between the channel and the control gate is considered. A self-consistent simulation for such memory devices is performed and aims to understand the relationship between the device structure and the meaningful quantities, as required for an efficient device operation. In this study, both the traditional SiO2 and HfO2 high-k dielectrics are being explored, and their results are compared and contrasted. In particular, the superiority of HfO2 over the SiO2 is demonstrated through various interlocking investigations on the relationships between the tunneling current, dielectric thickness, barrier height, programming and retention times.

Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device

2004 ◽  
Vol 84 (26) ◽  
pp. 5407-5409 ◽  
Author(s):  
Ying Qian Wang ◽  
Jing Hao Chen ◽  
Won Jong Yoo ◽  
Yee-Chia Yeo ◽  
Sun Jung Kim ◽  
...  
Keyword(s):  
Memory Device ◽  
High K ◽  
High K Dielectric ◽  
Ge Nanocrystals

Charge-Trapping-Type Flash Memory Device With Stacked High-$k$ Charge-Trapping Layer

2009 ◽  
Vol 30 (7) ◽  
pp. 775-777 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Te-Chiang Liu ◽  
Tien-Ko Wang ◽  
Pei-Jer Tzeng ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
High K

Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device

2008 ◽  
Vol 93 (25) ◽  
pp. 252902 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Dong-Wei Yang ◽  
Yuan-Bin Chung ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Work Function ◽  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Metal Gate ◽  
High Work Function ◽  
High K ◽  
High Work
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