Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation

2011 ◽  
Vol 44 (2) ◽  
pp. 361-366 ◽  
Author(s):  
X.M. Yang ◽  
X.M. Wu ◽  
L.J. zhuge ◽  
T. Yu
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Electrical Performance ◽  
Nitrogen Incorporation

Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

2004 ◽  
Vol 84 (9) ◽  
pp. 1588-1590 ◽  
Author(s):  
J. F. Kang ◽  
H. Y. Yu ◽  
C. Ren ◽  
M.-F. Li ◽  
D. S. H. Chan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Reactive Sputtering ◽  
Thermal Stability Of

Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey

Nanoscale ◽  
2019 ◽  
Vol 11 (48) ◽  
pp. 23459-23474 ◽  
Author(s):  
Taki Eddine Taouririt ◽  
Afak Meftah ◽  
Nouredine Sengouga ◽  
Marwa Adaika ◽  
Slimane Chala ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Dielectric Layers ◽  
High K ◽  
Different Types ◽  
Silvaco Atlas

This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.

Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics

2006 ◽  
Vol 89 (24) ◽  
pp. 242902 ◽  
Author(s):  
K. Ramani ◽  
C. R. Essary ◽  
S. Y. Son ◽  
V. Craciun ◽  
R. K. Singh
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Nitrogen Incorporation ◽  
Incorporation Method

Study of HfAlOx Films Deposited by Layer-by-Layer Growth for CMOS High-k Gate Dielectrics

2003 ◽  
Vol 786 ◽  
Author(s):  
Akira Toriumi ◽  
Toshihide Nabatame ◽  
Tsuyoshi Horikawa
Keyword(s):  
Gate Dielectrics ◽  
Layer Growth ◽  
Atomic Diffusion ◽  
Layer By Layer ◽  
Al Content ◽  
Nitrogen Incorporation ◽  
Layer Deposition ◽  
Superlattice Peak ◽  
High K ◽  
Ternary Metal

ABSTRACTWe have investigated ternary metal oxide films for high-k gate dielectrics by using a layer-by-layer deposition & annealing method so as to keep the dielectric constant of the film high with no crystallization. HfAlOx films have been prepared by alternating deposition of HfO2 and Al2O3 layers, where it is a key for the improvement of the film quality to understand the intermixing process between two layers by thermal treatments. So, we first discuss the atomic diffusion and structural change of the HfO2/Al2O3 “superlattice” film as a function of the annealing temperature by changing the Hf/Al ratio. In a typical case of the film with HfOx/AlOx=3Å/9Å cycle, a clear superlattice peak is observed below 750 °C by XRD. Above 850 °C, a different type of crystalline structure with no superlattice peaks is observed. These results indicate that the intermixing in HfO2/Al2O3 (3Å/9Å) films occurs between 750 and 850 °C. The intermixing onset temperature increases with increasing Al content in Hf/Al ratio.To further increase the crystallization temperature, nitrogen incorporation into the film is considered, and effects of the nitrogen incorporation into HfAlOx films are studied from the structural and electrical viewpoints. The results indicate that there is a tradeoff between crystallization restriction and leakage current degradation for the nitrogen incorporation into HfAlOx films.

Effects of metal oxide coatings on the thermal stability and electrical performance of LiCoCO2 in a Li-ion cell

2004 ◽  
Vol 126 (1-2) ◽  
pp. 156-162 ◽  
Author(s):  
Ho-Jin Kweon ◽  
JeonJoon Park ◽  
JunWon Seo ◽  
GeunBae Kim ◽  
BokHwan Jung ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Electrical Performance ◽  
Oxide Coatings ◽  
Li Ion ◽  
Metal Oxide Coatings
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