Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics

2006 ◽  
Vol 89 (24) ◽  
pp. 242902 ◽  
Author(s):  
K. Ramani ◽  
C. R. Essary ◽  
S. Y. Son ◽  
V. Craciun ◽  
R. K. Singh
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Nitrogen Incorporation ◽  
Incorporation Method

Electrical Properties of Low-Temperature-Compatible P-Channel Polycrystalline-Silicon TFTs Using High-$\kappa$ Gate Dielectrics

2008 ◽  
Vol 55 (4) ◽  
pp. 1027-1034 ◽  
Author(s):  
Ming-Jui Yang ◽  
Chao-Hsin Chien ◽  
Yi-Hsien Lu ◽  
Chih-Yen Shen ◽  
Tiao-Yuan Huang
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Gate Dielectrics

Electrical Properties of Oxide-Nitride-Oxide, Ono, Heterostructures Fabricated by Low Temperature Remote PECVD

1992 ◽  
Vol 284 ◽  
Author(s):  
Y. Ma ◽  
T. Yasuda ◽  
Y. L. Chen ◽  
G. Lucovsky ◽  
D. M. Maher
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Flat Band ◽  
Metal Insulator ◽  
Thermally Grown Oxides ◽  
Dielectric Interfaces ◽  
Nitride Oxide

ABSTRACTOxide-Nitride-Oxide, ONO, heterostructures, fabricated by low-temperature, 300°C, Remote Plasma Enhanced Chemical Vapor Deposition, have been used as gate dielectrics in metal insulator semiconductor devices. Analysis of C-V data for this devices indicates that higher levels of fixed charge are associated with the internal dielectric interfaces. A high-temperature, ̃900°C, Rapid Thermal Annealing, RTA, step has been inserted into the process sequence for fabricating ultra-thin, 4.7 nm SiO2 equivalent, device-quality ONO dielectric layers. The electrical properties of these ONO dielectrics, including the Si/SiO2 interfacial trap density, the flat band voltage, the charge to breakdown and the reliability under electron injection are comparable to those of high temperature, thermally-grown oxides.

Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

2014 ◽  
Vol 2 (27) ◽  
pp. 5299-5308 ◽  
Author(s):  
Gang He ◽  
Jiangwei Liu ◽  
Hanshuang Chen ◽  
Yanmei Liu ◽  
Zhaoqi Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Gate Stacks ◽  
Electrical Measurements ◽  
Interface Control ◽  
Nitrogen Incorporation ◽  
Gaas Substrates ◽  
Optical Dielectric

Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric function, band alignment, and electrical properties of sputtering-derived HfTiO high-kgate dielectrics on GaAs substrates have been studied by angle resolved X-ray photoemission spectroscopy (ARXPS), spectroscopy ellipsometry (SE), and electrical measurements.

scholarly journals Effect of Curing Agents on Electrical Properties of Low-Temperature Curing Conductive Coatings and Thermodynamic Analysis

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 656
Author(s):  
Junjie Shu ◽  
Yang Wang ◽  
Bei Guo ◽  
Weihua Qin ◽  
Lanxuan Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Surface Resistance ◽  
Advanced Manufacturing ◽  
Curing Time ◽  
Conductive Coatings ◽  
Exponential Factor ◽  
Design Expert ◽  
Surface Method ◽  
Curing Agents

Silver-based high-conductivity coatings are used in many advanced manufacturing equipment and components, and existing coatings require high-temperature curing. This paper studies the effects of different curing agents on the electrical properties of low-temperature curing (<100 °C) conductive coatings, and analyzes the effects of different curing temperatures and curing time on the surface resistance, square resistance and resistivity of conductive coatings. The response surface method in Design Expert was used to construct the model, and the curing thermodynamics of different curing agents were analyzed by DSC. It was found that curing agents with lower Tm and activation energy, higher pre-exponential factor and more flexible segments are beneficial to the preparation of highly conductive coatings.

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