Nitrogen Incorporation in Gate Dielectrics: A Correlation Between Auger Electron Spectroscopy and Surface Charge Analysis Techniques

1995 ◽  
Vol 142 (10) ◽  
pp. L171-L172 ◽  
Author(s):  
A. Philipossian ◽  
B. Doylea ◽  
K. Van Wormer
Keyword(s):  
Auger Electron Spectroscopy ◽  
Surface Charge ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Gate Dielectrics ◽  
Analysis Techniques ◽  
Nitrogen Incorporation ◽  
Charge Analysis

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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