Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

2004 ◽  
Vol 84 (9) ◽  
pp. 1588-1590 ◽  
Author(s):  
J. F. Kang ◽  
H. Y. Yu ◽  
C. Ren ◽  
M.-F. Li ◽  
D. S. H. Chan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Reactive Sputtering ◽  
Thermal Stability Of

scholarly journals INVESTIGATION ON THERMAL STABILITY OF REACTIVE- SPUTTERING a-Si:H/a-Ge:H SUPERLATTICES

1992 ◽  
Vol 41 (2) ◽  
pp. 302
Author(s):  
WANG YIN-YUE ◽  
XU HUAI-ZHE ◽  
CHEN GUANG-HUA
Keyword(s):  
Thermal Stability ◽  
Reactive Sputtering ◽  
Thermal Stability Of

Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2]

2003 ◽  
Vol 150 (5) ◽  
pp. F79 ◽  
Author(s):  
You-Seok Suh ◽  
Greg P. Heuss ◽  
Veena Misra ◽  
Dae-Gyu Park ◽  
Kwan-Yong Lim
Keyword(s):  
Thermal Stability ◽  
Reactive Sputtering ◽  
Thermal Stability Of

Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers

2007 ◽  
Vol 90 (20) ◽  
pp. 202102 ◽  
Author(s):  
Jungwoo Oh ◽  
Prashant Majhi ◽  
Chang Yong Kang ◽  
Ji-Woon Yang ◽  
Hsing-Huang Tseng ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Epitaxial Layers ◽  
High K ◽  
Thermal Stability Of

Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology

Vacuum ◽  
2007 ◽  
Vol 81 (10) ◽  
pp. 1379-1384 ◽  
Author(s):  
D. Machajdík ◽  
A.P. Kobzev ◽  
K. Hušeková ◽  
M. Ťapajna ◽  
K. Fro˝hlich ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Cmos Technology ◽  
Gate Stacks ◽  
Thermal Stability Of

Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics

2002 ◽  
Vol 81 (8) ◽  
pp. 1417-1419 ◽  
Author(s):  
Charles M. Perkins ◽  
Baylor B. Triplett ◽  
Paul C. McIntyre ◽  
Krishna C. Saraswat ◽  
Eric Shero
Keyword(s):  
Thermal Stability ◽  
Polycrystalline Silicon ◽  
Gate Dielectrics ◽  
Thermal Stability Of

Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)

2011 ◽  
Vol 470 ◽  
pp. 152-157 ◽  
Author(s):  
Heiji Watanabe ◽  
Katsuhiro Kutsuki ◽  
Iori Hideshima ◽  
Gaku Okamoto ◽  
Takuji Hosoi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Air Exposure ◽  
Mos Capacitors ◽  
Plasma Nitridation ◽  
The Impact ◽  
Thermal Stability Of

We demonstrated the impact of plasma nitridation on thermally grown GeO2 for the purposes of obtaining high-quality germanium oxynitride (GeON) gate dielectrics. Physical characterizations revealed the formation of a nitrogen-rich surface layer on the ultrathin oxide, while keeping an abrupt GeO2/Ge interface without a transition layer. The thermal stability of the GeON layer was significantly improved over that of the pure oxide. We also found that although the GeO2 layer is vulnerable to air exposure, a nitrogen-rich layer suppresses electrical degradation and provides excellent insulating properties. Consequently, we were able to obtain Ge-MOS capacitors with GeON dielectrics of an equivalent oxide thickness (EOT) as small as 1.7 nm. Minimum interface state density (Dit) values of GeON/Ge structures, i.e., as low as 3 x 1011 cm-2eV-1, were successfully obtained for both the lower and upper halves of the bandgap.

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