Study of HfAlOx Films Deposited by Layer-by-Layer Growth for CMOS High-k Gate Dielectrics

2003 ◽  
Vol 786 ◽  
Author(s):  
Akira Toriumi ◽  
Toshihide Nabatame ◽  
Tsuyoshi Horikawa
Keyword(s):  
Gate Dielectrics ◽  
Layer Growth ◽  
Atomic Diffusion ◽  
Layer By Layer ◽  
Al Content ◽  
Nitrogen Incorporation ◽  
Layer Deposition ◽  
Superlattice Peak ◽  
High K ◽  
Ternary Metal

ABSTRACTWe have investigated ternary metal oxide films for high-k gate dielectrics by using a layer-by-layer deposition & annealing method so as to keep the dielectric constant of the film high with no crystallization. HfAlOx films have been prepared by alternating deposition of HfO2 and Al2O3 layers, where it is a key for the improvement of the film quality to understand the intermixing process between two layers by thermal treatments. So, we first discuss the atomic diffusion and structural change of the HfO2/Al2O3 “superlattice” film as a function of the annealing temperature by changing the Hf/Al ratio. In a typical case of the film with HfOx/AlOx=3Å/9Å cycle, a clear superlattice peak is observed below 750 °C by XRD. Above 850 °C, a different type of crystalline structure with no superlattice peaks is observed. These results indicate that the intermixing in HfO2/Al2O3 (3Å/9Å) films occurs between 750 and 850 °C. The intermixing onset temperature increases with increasing Al content in Hf/Al ratio.To further increase the crystallization temperature, nitrogen incorporation into the film is considered, and effects of the nitrogen incorporation into HfAlOx films are studied from the structural and electrical viewpoints. The results indicate that there is a tradeoff between crystallization restriction and leakage current degradation for the nitrogen incorporation into HfAlOx films.

Rheed Intensity Oscillation During Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Thin Films

1992 ◽  
Vol 275 ◽  
Author(s):  
K. Yoshikawa ◽  
N. Sasaki
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Growth Interruption ◽  
Layer Deposition ◽  
Unit Cells ◽  
Layered Growth

ABSTRACTUsing in-situ reflection high-energy electron diffraction (RHEED), we studied the growth of Bi-Sr-Ca-Cu-O (BSCCO) thin films prepared by reactive evaporation using layer-by-layer deposition. Bi2Sr2CaCu2Ox(2212) tends to be grown three-dimensionally if it is grown directly on (100) SrTiO3, in contrast to Bi2Sr2CuOx(2201) which is easily grown two-dimensionally on SrTiO3. Two-dimensional 2212 growth can be realized, if a buffer layer of 2201 is deposited on (100) SrTiO3 and growth interruption is utilized after SrO layer deposition. A buffer layer of only two 2201 unit cells improved the surface crystallinity of the substrate for the epitaxial growth of 2212. Growth interruption for two minutes after the 2nd SrO layer in the half unit cell is necessary to keep two-dimensional layered growth. The resulting Tc (zero) is 76 K and Jc (at 4.2 K) is 1.5 × 106 (A/cm2) with these epitaxial films.

Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor

2014 ◽  
Vol 778-780 ◽  
pp. 549-552 ◽  
Author(s):  
Jing Hua Xia ◽  
David M. Martin ◽  
Sethu Saveda Suvanam ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Deposition Process ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Layer Deposition ◽  
High K ◽  
Film Characteristics

LaxHfyO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

2018 ◽  
Vol 443 ◽  
pp. 421-428 ◽  
Author(s):  
Yu-Shu Lin ◽  
Po-Hsien Cheng ◽  
Kuei-Wen Huang ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Functionalization ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

Highly-ordered Porous Coordination Polymer Nanofilms Grown by Layer-by-Layer Deposition Technique

2011 ◽  
Vol 1312 ◽  
Author(s):  
Rie Makiura ◽  
Hiroshi Kitagawa
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
Unique Combination ◽  
Growth Technique ◽  
X Ray ◽  
Langmuir Blodgett ◽  
Layer Deposition ◽  
Out Of Plane ◽  
Porous Coordination Polymer ◽  
Ordered Porous

ABSTRACTThe facile bottom-up fabrication of a perfect preferentially-oriented MOF nanofilm, NAFS-1 on a solid surface, which is endowed with highly crystalline order both in the out-of-plane and in-plane orientations to the substrate, as determined by synchrotron X-ray surface crystallography, was achieved by the unique combination of a layer-by-layer growth technique coupled with the Langmuir-Blodgett (LB) method.

Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

2020 ◽  
Vol 109 ◽  
pp. 104933
Author(s):  
Kuei-Wen Huang ◽  
Teng-Jan Chang ◽  
Chun-Yuan Wang ◽  
Sheng-Han Yi ◽  
Chin-I. Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer By Layer ◽  
High K
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