Influence of Growth Parameters on the Properties of InxGa1-xAs Grown on GaAs by OMVPE

1994 ◽  
Vol 340 ◽  
Author(s):  
E. Ernest Van Dyk ◽  
Andrew W. R. Leitch ◽  
Hendrik L. Ehlers
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Atmospheric Pressure ◽  
Growth Parameters ◽  
Gas Composition ◽  
Electrical And Optical Properties ◽  
Gaas Substrates

ABSTRACTInxGa1-xAs epilayers (x < 0.2) have been grown on GaAs substrates by atmospheric pressure OMVPE. The effects of varying the substrate temperature and the gas composition on the properties of the epilayers were investigated. The investigations have shown that higher mobilities were obtained at low growth temperatures (610°C), while optimum optical properties were obtained at higher growth temperatures (690°C). Variation of the AsH3 overpressure yielded optimum electrical and optical properties at a V/III ratio of 50. 77 K mobilities higher than 42 000 cm2/V.s and photoluminescence linewidths as low as 4.4 meV were obtained for x = 0.087 and x = 0.137 epilayers, respectively.

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Dependence of electrical and optical properties of ZnO films on substrate temperature

2001 ◽  
Vol 4 (6) ◽  
pp. 617-620 ◽  
Author(s):  
X.L. Xu ◽  
S.P. Lau ◽  
J.S. Chen ◽  
Z. Sun ◽  
B.K. Tay ◽  
...  
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Zno Films ◽  
Electrical And Optical Properties

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

Impact of substrate temperature on the microstructure, electrical and optical properties of sputtered nanoparticle V2O5 thin films

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 145-150 ◽  
Author(s):  
Zhenfei Luo ◽  
Zhiming Wu ◽  
Xiangdong Xu ◽  
Mingjun Du ◽  
Tao Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Electrical And Optical Properties ◽  
V2o5 Thin Films
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