scholarly journals Breakdown Voltage Effect on coupling Ratio Fusion Fiber Coupling

2011 ◽  
Vol 19 ◽  
pp. 477-481 ◽  
Author(s):  
Dedi Irawan ◽  
Saktioto ◽  
Jalil Ali ◽  
Defrianto
Keyword(s):  
Breakdown Voltage ◽  
Coupling Ratio ◽  
Fiber Coupling

MODELING OF INDUCED VOLTAGE OF SILICON DIOXIDE FIBER COUPLING

2009 ◽  
Vol 18 (03) ◽  
pp. 481-488 ◽  
Author(s):  
NOR FARIDAH HANIM ◽  
SAKTIOTO ◽  
JALIL ALI ◽  
ROSLY ABDUL RAHMAN
Keyword(s):  
Refractive Index ◽  
Silicon Dioxide ◽  
Breakdown Voltage ◽  
Coupling Coefficient ◽  
Empirical Equation ◽  
Induced Voltage ◽  
New Model ◽  
Fiber Coupling ◽  
Fiber Coupler

This paper describes a new model for the breakdown voltage of SiO 2 fiber coupler using the Pockel effect and empirical equation. The model is evaluated by using the coupling coefficient and the changes in the refractive index. We found that the breakdown voltage is in the order of 102 volt corresponding to coupling coefficient by the order of mm-1. Increasing the value of coupling coefficient between the electrodes leads to a reduction in the breakdown voltage.

The analysis of spatial light to Bragg fiber coupling ratio

Optik ◽  
2010 ◽  
Vol 121 (24) ◽  
pp. 2259-2261 ◽  
Author(s):  
Weijun Chen ◽  
Huajun Yang ◽  
Zhibo Li ◽  
Jin Li ◽  
Bin Zhu
Keyword(s):  
Coupling Ratio ◽  
Fiber Coupling ◽  
Bragg Fiber

Characteristics of Negative Lightning Impulse Breakdown Voltage in Pure Water

2018 ◽  
Vol 138 (8) ◽  
pp. 441-448 ◽  
Author(s):  
Norimitsu Takamura ◽  
Nobutaka Araoka ◽  
Seiya Kamohara ◽  
Yuta Hino ◽  
Takuya Beppu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Pure Water ◽  
Lightning Impulse

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

Increased breakdown voltage of silicon-on-insulator Schottky diodes

1993 ◽  
Vol 29 (15) ◽  
pp. 1381 ◽  
Author(s):  
B.R. Kang ◽  
S.N. Yoon ◽  
Y.H. Cho ◽  
S.I. Cha ◽  
Y.I. Choi
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Silicon On Insulator

scholarly journals Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Switching Circuit ◽  
High Breakdown Voltage
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