Control of interfacial charges of organic semiconductor by a surface polarized layer for high noise-margin inverters with full-swing capability

2012 ◽  
Vol 13 (11) ◽  
pp. 2365-2371 ◽  
Author(s):  
Min-Hoi Kim ◽  
Seung-Peom Noh ◽  
Chang-Min Keum ◽  
Jin-Hyuk Bae ◽  
Sin-Doo Lee
2009 ◽  
Vol 94 (4) ◽  
pp. 043312 ◽  
Author(s):  
Xiao-Hong Zhang ◽  
William J. Potscavage ◽  
Seungkeun Choi ◽  
Bernard Kippelen

VLSI Design ◽  
2009 ◽  
Vol 2009 ◽  
pp. 1-7 ◽  
Author(s):  
Khader Mohammad ◽  
Ayman Dodin ◽  
Bao Liu ◽  
Sos Agaian

We propose a novel circuit technique to generate a reduced voltage swing (RVS) signals for active power reduction on main buses and clocks. This is achieved without performance degradation, without extra power supply requirement, and with minimum area overhead. The technique stops the discharge path on the net that is swinging low at a certain voltage value. It reduces active power on the target net by as much as 33% compared to traditional full swing signaling. The logic 0 voltage value is programmable through control bits. If desired, the reduced-swing mode can also be disabled. The approach assumes that the logic 0 voltage value is always less than the threshold voltage of the nMOS receivers, which eliminate the need of the low to high voltage translation. The reduced noise margin and the increased leakage on the receiver transistors using this approach have been addressed through the selective usage of multithreshold voltage (MTV) devices and the programmability of the low voltage value.


2017 ◽  
Vol 622 ◽  
pp. 29-33 ◽  
Author(s):  
Dong-Hoon Lee ◽  
Jinsu Kim ◽  
Hyeong-Jun Cho ◽  
Min Su Kim ◽  
Eung-Kyu Park ◽  
...  
Keyword(s):  

2020 ◽  
Vol 28 (5) ◽  
pp. 7139
Author(s):  
Jinpeng Liu ◽  
Le Zhang ◽  
Anan Wu ◽  
Yoshito Tanaka ◽  
Masanobu Shigaki ◽  
...  

2020 ◽  
Vol 14 (7) ◽  
pp. 929-941 ◽  
Author(s):  
Seied Ali Hosseini ◽  
Sajjad Etezadi
Keyword(s):  

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