Fabrication of Poly-Silicon Nano-Wire Transistors on Plastic Substrates

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.