In-situ low-energy background measurement in D2O+salt phase of the Sudbury Neutrino Observatory, using the isotropy of β-γ Čerenkov light

2005 ◽  
Vol 138 ◽  
pp. 533-535
Author(s):  
S.J.M. Peeters
2011 ◽  
Vol 1354 ◽  
Author(s):  
Jean Paul Allain ◽  
Osman El-Atwani ◽  
Alex Cimaroli ◽  
Daniel L. Rokusek ◽  
Sami Ortoleva ◽  
...  

ABSTRACTIon-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much work has been focused on tailoring nanopatterning by systematic ion-beam parameter manipulation, limited work has addressed elucidating on the underlying mechanisms for self-organization of multi-component surfaces. In particular there has been little attention to correlate the surface chemistry variation during ion irradiation with the evolution of surface morphology and nanoscale self-organization. Moreover the role of surface impurities on patterning is not well known and characterization during the time-scale of modification remains challenging. This work summarizes an in-situ approach to characterize the evolution of surface chemistry during irradiation and its correlation to surface nanopatterning for a variety of multi-components surfaces. The work highlights the importance and role of surface impurities in nanopatterning of a surface during low-energy ion irradiation. In particular, it shows the importance of irradiation-driven mechanisms in GaSb(100) nanopatterning by low-energy ions and how the study of these systems can be impacted by oxide formation.


1989 ◽  
Vol 145 ◽  
Author(s):  
H. Temkin ◽  
L. R. Harriott ◽  
J. Weiner ◽  
R. A. Hamm ◽  
M. B. Panish

AbstractWe demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.


2019 ◽  
Vol 25 (S2) ◽  
pp. 548-549
Author(s):  
Mikhail Dutka ◽  
Romaine Isaacs ◽  
Anna Prokhodtseva ◽  
Tomáš Vystavěl

2014 ◽  
Vol 259 ◽  
pp. 434-441 ◽  
Author(s):  
D. Manova ◽  
D. Hirsch ◽  
J.W. Gerlach ◽  
S. Mändl ◽  
H. Neumann ◽  
...  

1994 ◽  
Vol 12 (6) ◽  
pp. 3012-3017 ◽  
Author(s):  
W. T. Taferner ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
A. Ignatiev ◽  
Kelley Waters ◽  
...  

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