Study of scalable IBS nanopatterning mechanisms for III-V semiconductors using in-situ surface characterization

2011 ◽  
Vol 1354 ◽  
Author(s):  
Jean Paul Allain ◽  
Osman El-Atwani ◽  
Alex Cimaroli ◽  
Daniel L. Rokusek ◽  
Sami Ortoleva ◽  
...  
Keyword(s):  
Surface Chemistry ◽  
Surface Characterization ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Self Organization ◽  
Beam Parameter ◽  
Ion Beam Sputtering

ABSTRACTIon-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much work has been focused on tailoring nanopatterning by systematic ion-beam parameter manipulation, limited work has addressed elucidating on the underlying mechanisms for self-organization of multi-component surfaces. In particular there has been little attention to correlate the surface chemistry variation during ion irradiation with the evolution of surface morphology and nanoscale self-organization. Moreover the role of surface impurities on patterning is not well known and characterization during the time-scale of modification remains challenging. This work summarizes an in-situ approach to characterize the evolution of surface chemistry during irradiation and its correlation to surface nanopatterning for a variety of multi-components surfaces. The work highlights the importance and role of surface impurities in nanopatterning of a surface during low-energy ion irradiation. In particular, it shows the importance of irradiation-driven mechanisms in GaSb(100) nanopatterning by low-energy ions and how the study of these systems can be impacted by oxide formation.

Intrinsic stress and alloying effect in Mo/Ni superlattices: a comparison between ion beam sputtering and thermal evaporation

2005 ◽  
Vol 875 ◽  
Author(s):  
A. Debelle ◽  
G. Abadias ◽  
A. Michel ◽  
C. Jaouen ◽  
Ph. Guérin ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Parameter ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Deposited Energy

AbstractEpitaxial Mo(110)/Ni(111) superlattices were grown on (1120) single-crystal sapphiresubstrates, by ion beam sputtering (IBS) and thermal evaporation (TE), in order to investigate the role of deposited energy on the interfacial mixing process observed in Mo sublayers. To separate intermixing and growth stress contributions, a careful and detailed characterization of the stress/strain state of both samples was performed by X-ray Diffraction (XRD). Non-equal biaxial coherency stresses are observed in both samples. For the IBS specimen, an additional source of stress, of hydrostatic type, due to growth-induced point defects, is present, resulting in a triaxial stress state. The use of ion irradiation to achieve a controlled stress relaxation can provide additional data and, as shown elsewhere, allows to obtain the stress-free lattice parameter a0 solely linked to chemical effects. For the TE sample, a standard biaxial analysis gives a0. In both samples, the a0 value is lower than the bulk lattice parameter, due to the presence of intermixed Mo(Ni) layers. However, the intermixing is larger in the sputtered Mo sublayers than in the thermal evaporated ones, putting forward the prime role of energy and/or momentum transfer occurring during energetic bombardment.

Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

The Role of Ion Beam Assisted Surface Chemistry in Etching: Adsorption and Reactions of ALKYL Halides

1992 ◽  
Vol 268 ◽  
Author(s):  
Duncan Marshall ◽  
Richard B. Jackman
Keyword(s):  
Surface Chemistry ◽  
Ion Beam ◽  
Alkyl Halides ◽  
Ion Beam Etching ◽  
Spectroscopic Probes

ABSTRACTThe form of ideal surface chemistry that is necessary for chemically assisted ion beam etching (CAIBE), with particular reference to in-situ processing is considered. Whilst to date CAIBE has been almost exclusively carried out with chlorine, distinct advantages exist if a compound that which displays spontaneous reactivity which is limited to one or two monolayers can be used. The role of alkyl halides in this scenario has been investigated through the use of surface spectroscopic probes to investigate the microscopic chemical and ion beam assisted reactivity that may be achieved. Dichloroethane has been found to display promising behaviour.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

scholarly journals Engineering bright fluorescent nitrogen-vacancy (NV) nano-diamonds: Role of low-energy ion-irradiation parameters

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085023 ◽  
Author(s):  
Ravi Kumar ◽  
Priyanka Pandit ◽  
Prabir Pal ◽  
S. R. Dhakate ◽  
R. P. Pant ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Low Energy ◽  
Nitrogen Vacancy

High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
H. Temkin ◽  
L. R. Harriott ◽  
J. Weiner ◽  
R. A. Hamm ◽  
M. B. Panish
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Low Energy ◽  
High Quality ◽  
Lithography Process ◽  
Luminescence Efficiency ◽  
Surface Steps ◽  
Inp Substrates ◽  
Vacuum Lithography

AbstractWe demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

New Instrumentation in Argonne's Hvem-Tandem Facility: Expanded Capability for in Situ Ion Beam Studies+

1995 ◽  
Vol 396 ◽  
Author(s):  
Charles W. Allen ◽  
Loren L. Funk ◽  
Edward A. Ryan
Keyword(s):  
Scientific Community ◽  
State Of The Art ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Voltage Electron ◽  
User Facility ◽  
Order Of Magnitude ◽  
New Instrumentation ◽  
Better Than

AbstractDuring 1995, a state-of-the-art intermediate voltage electron microscope (IVEM) has been installed in the HVEM-Tandem Facility with in situ ion irradiation capabilities similar to those of the HVEM. A 300 kV Hitachi H-9000NAR has been interfaced to the two ion accelerators of the Facility, with a spatial resolution for imaging which is nearly an order of magnitude better than that for the 1.2 MV HVEM which dates from the early 1970s. The HVEM remains heavily utilized for electron- and ion irradiation-related materials studies, nevertheless, especially those for which less demanding microscopy is adequate. The capabilities and limitations of this IVEM and HVEM are compared. Both the HVEM and IVEM are part of the DOE funded User Facility and therefore are available to the scientific community for materials studies, free of charge for non-proprietary research.

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