Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

M. Tapajna; O. Hilt; E. Bahat-Treidel; J. Wurfl; J. Kuzmik

doi:10.1109/led.2016.2535133

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

IEEE Electron Device Letters ◽

10.1109/led.2016.2535133 ◽

2016 ◽

Vol 37 (4) ◽

pp. 385-388 ◽

Cited By ~ 67

Author(s):

M. Tapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Wurfl ◽

J. Kuzmik

Keyword(s):

Forward Bias ◽

Bias Stress ◽

Gan Hemts ◽

P Type

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Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2016.7520771 ◽

2016 ◽

Cited By ~ 5

Author(s):

Isabella Rossetto ◽

Matteo Meneghini ◽

Riccardo Silvestri ◽

Stefano Dalcanale ◽

Enrico Zanoni ◽

...

Keyword(s):

Electron Mobility ◽

Forward Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

Experimental Demonstration ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

P Type

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Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs--Part II

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3064531 ◽

2021 ◽

pp. 1-8

Author(s):

Sayak Dutta Gupta ◽

Vipin Joshi ◽

Rajarshi Roy Chaudhuri ◽

Mayank Shrivastava

Keyword(s):

Surface Passivation ◽

Gan Hemts ◽

P Type

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Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress

10.1109/phm-nanjing52125.2021.9612888 ◽

2021 ◽

Author(s):

WenYang Chen ◽

Y.Q. Chen ◽

KuiWei Geng

Keyword(s):

High Temperature ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Gan Hemts ◽

Gate Bias Stress

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Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734600 ◽

2018 ◽

Author(s):

Qing Zhu ◽

Bin Hou ◽

Ling Yang ◽

Lixiang Chen ◽

Meng Zhang ◽

...

Keyword(s):

Reverse Bias ◽

Bias Stress ◽

Gan Hemts

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Improving Bias-Stress Stability of p-Type Organic Field-Effect Transistors by Constructing an Electron Injection Barrier at the Drain Electrode/Semiconductor Interfaces

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c12188 ◽

2020 ◽

Vol 12 (37) ◽

pp. 41886-41895

Author(s):

Zhenxin Yang ◽

Chunhua Guo ◽

Changsheng Shi ◽

Deng-Ke Wang ◽

Tao Zhang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Injection ◽

Organic Field Effect Transistors ◽

Bias Stress ◽

Semiconductor Interfaces ◽

Drain Electrode ◽

P Type ◽

Injection Barrier

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The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.10.043 ◽

2015 ◽

Vol 30 ◽

pp. 393-399 ◽

Cited By ~ 5

Author(s):

D. Korucu ◽

S. Duman ◽

A. Turut

Keyword(s):

Indium Phosphide ◽

Schottky Barrier ◽

Forward Bias ◽

Schottky Barrier Diode ◽

Voltage Dependent ◽

P Type ◽

Dependent Behaviour

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Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Microelectronics Reliability ◽

10.1016/j.microrel.2015.11.026 ◽

2016 ◽

Vol 58 ◽

pp. 177-184 ◽

Cited By ~ 11

Author(s):

M. Meneghini ◽

O. Hilt ◽

C. Fleury ◽

R. Silvestri ◽

M. Capriotti ◽

...

Keyword(s):

Gan Hemts ◽

P Type

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Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

Applied Surface Science ◽

10.1016/j.apsusc.2018.08.135 ◽

2018 ◽

Vol 462 ◽

pp. 799-803 ◽

Cited By ~ 6

Author(s):

Tong Zhang ◽

Lei Wang ◽

Xiaobo Li ◽

Yuyu Bu ◽

Taofei Pu ◽

...

Keyword(s):

Threshold Voltage ◽

Reactive Sputtering ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Positive Threshold ◽

Gan Hemts ◽

P Type

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Influence of mechanical bending strain on bias-stress stability of flexible top-gate p-type SnO TFTs

Advances in Display Technologies X ◽

10.1117/12.2543792 ◽

2020 ◽

Author(s):

I-Chun Cheng ◽

Shu-Ming Hsu ◽

Wei-Chen Lin ◽

Jian-Zhang Chen

Keyword(s):

Bias Stress ◽

Bending Strain ◽

Mechanical Bending ◽

P Type

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Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

Chinese Physics B ◽

10.1088/1674-1056/28/8/088502 ◽

2019 ◽

Vol 28 (8) ◽

pp. 088502

Author(s):

Chao-Yang Han ◽

Yuan Liu ◽

Yu-Rong Liu ◽

Ya-Yi Chen ◽

Li Wang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Gate Bias ◽

Stress Effects ◽

Bias Stress ◽

Noise Characteristics ◽

P Type ◽

Si Thin Film

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