UIS test of high-voltage GaN-HEMTs with p-type gate structure

2016 ◽  
Vol 64 ◽  
pp. 552-555 ◽  
Author(s):  
W. Saito ◽  
T. Naka
Keyword(s):  
High Voltage ◽  
Gate Structure ◽  
Gan Hemts ◽  
P Type

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

2020 ◽  
Vol 67 (12) ◽  
pp. 5454-5459
Author(s):  
Xuan Li ◽  
Shiwei Feng ◽  
Chang Liu ◽  
Yamin Zhang ◽  
Kun Bai ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
High Voltage ◽  
Measurement Method ◽  
Resistance Measurement ◽  
Gan Hemts

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

2016 ◽  
Vol 58 ◽  
pp. 177-184 ◽  
Author(s):  
M. Meneghini ◽  
O. Hilt ◽  
C. Fleury ◽  
R. Silvestri ◽  
M. Capriotti ◽  
...  
Keyword(s):  
Gan Hemts ◽  
P Type

Breakdown behaviour of high-voltage GaN-HEMTs

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1682-1686 ◽  
Author(s):  
W. Saito ◽  
T. Suwa ◽  
T. Uchihara ◽  
T. Naka ◽  
T. Kobayashi
Keyword(s):  
High Voltage ◽  
Gan Hemts
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