Detailed investigation of the effects of La and Al content on the electrical characteristics and reliability properties of La–Al–O gate dielectrics

2010 ◽  
Vol 50 (12) ◽  
pp. 1920-1923
Author(s):  
Masamichi Suzuki ◽  
Masato Koyama ◽  
Atsuhiro Kinoshita
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Al Content

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights

scholarly journals Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

2013 ◽  
Vol 8 (1) ◽  
pp. 18 ◽  
Author(s):  
Fa-Hsyang Chen ◽  
Jim-Long Her ◽  
Yu-Hsuan Shao ◽  
Yasuhiro H Matsuda ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics

Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure

2019 ◽  
Vol 25 (6) ◽  
pp. 265-270 ◽  
Author(s):  
Kiyohisa Funamizu ◽  
Yueh Chin Lin ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
Kazuo Tsutsui ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Mos Structure

Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

2011 ◽  
Vol 257 (9) ◽  
pp. 3964-3968 ◽  
Author(s):  
Tung-Ming Pan ◽  
Wei-Tsung Chang ◽  
Fu-Chien Chiu
Keyword(s):  
Structural Properties ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
High K

Structural and Electrical Characteristics of High-k Sm[sub 2]TiO[sub 5] Gate Dielectrics

2009 ◽  
Vol 12 (6) ◽  
pp. G27 ◽  
Author(s):  
Tung-Ming Pan ◽  
Li-Chen Yen ◽  
Chun-Chin Huang ◽  
Wu-Ching Lin
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
High K

Study of HfAlOx Films Deposited by Layer-by-Layer Growth for CMOS High-k Gate Dielectrics

2003 ◽  
Vol 786 ◽  
Author(s):  
Akira Toriumi ◽  
Toshihide Nabatame ◽  
Tsuyoshi Horikawa
Keyword(s):  
Gate Dielectrics ◽  
Layer Growth ◽  
Atomic Diffusion ◽  
Layer By Layer ◽  
Al Content ◽  
Nitrogen Incorporation ◽  
Layer Deposition ◽  
Superlattice Peak ◽  
High K ◽  
Ternary Metal

ABSTRACTWe have investigated ternary metal oxide films for high-k gate dielectrics by using a layer-by-layer deposition & annealing method so as to keep the dielectric constant of the film high with no crystallization. HfAlOx films have been prepared by alternating deposition of HfO2 and Al2O3 layers, where it is a key for the improvement of the film quality to understand the intermixing process between two layers by thermal treatments. So, we first discuss the atomic diffusion and structural change of the HfO2/Al2O3 “superlattice” film as a function of the annealing temperature by changing the Hf/Al ratio. In a typical case of the film with HfOx/AlOx=3Å/9Å cycle, a clear superlattice peak is observed below 750 °C by XRD. Above 850 °C, a different type of crystalline structure with no superlattice peaks is observed. These results indicate that the intermixing in HfO2/Al2O3 (3Å/9Å) films occurs between 750 and 850 °C. The intermixing onset temperature increases with increasing Al content in Hf/Al ratio.To further increase the crystallization temperature, nitrogen incorporation into the film is considered, and effects of the nitrogen incorporation into HfAlOx films are studied from the structural and electrical viewpoints. The results indicate that there is a tradeoff between crystallization restriction and leakage current degradation for the nitrogen incorporation into HfAlOx films.

Electrical Characteristics of LaAlO[sub 3] Gate Dielectrics Prepared by High-Pressure Hydrogen Post-Deposition Annealing

2006 ◽  
Vol 9 (11) ◽  
pp. F77 ◽  
Author(s):  
Musarrat Hasan ◽  
Min Seok Jo ◽  
Md. Shahriar Rahman ◽  
Hyejong Choi ◽  
Sungho Heo ◽  
...  
Keyword(s):  
High Pressure ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Post Deposition Annealing ◽  
Post Deposition ◽  
Pressure Hydrogen

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

2015 ◽  
Vol 138 ◽  
pp. 97-101 ◽  
Author(s):  
Win-Der Lee ◽  
Mu-Chun Wang ◽  
Shea-Jue Wang ◽  
Wen-How Lan ◽  
Jie-Min Yang ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Plasma Nitridation
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