Structural and Electrical Characteristics of High-k Sm[sub 2]TiO[sub 5] Gate Dielectrics

2009 ◽  
Vol 12 (6) ◽  
pp. G27 ◽  
Author(s):  
Tung-Ming Pan ◽  
Li-Chen Yen ◽  
Chun-Chin Huang ◽  
Wu-Ching Lin
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
High K

Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

2011 ◽  
Vol 257 (9) ◽  
pp. 3964-3968 ◽  
Author(s):  
Tung-Ming Pan ◽  
Wei-Tsung Chang ◽  
Fu-Chien Chiu
Keyword(s):  
Structural Properties ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
High K

scholarly journals Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5395
Author(s):  
Aleksandra Seweryn ◽  
Krystyna Lawniczak-Jablonska ◽  
Piotr Kuzmiuk ◽  
Sylwia Gieraltowska ◽  
Marek Godlewski ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Gate Dielectrics ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Practical Applications ◽  
High K ◽  
Structural And Electrical Properties ◽  
Ozone Precursor ◽  
Insulating Properties

The continuous development of ALD thin films demands ongoing improvements and changes toward fabricating materials with tailored properties that are suitable for different practical applications. Ozone has been recently established as a precursor, with distinct advantages over the alternative oxidizing precursors in the ALDs of advanced dielectric films. This study reports alumina (Al2O3) and hafnia (HfO2) formation using an O3 source and compares the obtained structural and electrical properties. The performed structural examinations of ozone-based materials proved homogenous high-k films with less vacancy levels compared to water-based films. The enhanced structural properties also result in the problematic incorporation of different dopants through the bulk layer. Furthermore, analysis of electrical characteristics of the MIS structures with ALD gate dielectrics demonstrated the improved quality and good insulating properties of ozone-based films. However, further optimization of the ALD technique with ozone is needed as a relatively low relative permittivity characterizes the ultra-thin films.

Nanoscale Transistors: Physics and Materials

2006 ◽  
Vol 958 ◽  
Author(s):  
Mark S. Lundstrom ◽  
Kurtis D. Cantley ◽  
Himadri S. Pal
Keyword(s):  
Gate Dielectric ◽  
Series Resistance ◽  
Gate Dielectrics ◽  
Future Generations ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Metal Gate ◽  
High K ◽  
High K Gate Dielectric

ABSTRACTWe analyze a modern-day 65nm MOSFET technology to determine its electrical characteristics and intrinsic ballistic efficiency. Using that information, we then predict the performance of similar devices comprised of different materials, such as high-k gate dielectrics and III-V channel materials. The effects of series resistance are considered. Comparisons are made between the performance of these hypothetical devices and future generations of devices from the ITRS roadmap, including double-gate MOSFETs. We conclude that a Si channel device with a high-k gate dielectric and metal gate will outperform III-V channel materials for conventional CMOS applications, but will still not suffice in achieving long-term ITRS goals.

Electrical Characteristics of Au/n-GaN Schottky Junction with a High-k SrTiO3 Insulating Layer

2019 ◽  
Vol 11 (4) ◽  
pp. 04005-1-04005-5 ◽  
Author(s):  
Varra Reddy ◽  
◽  
D. V. Vivekananda ◽  
G. Sai Krishna ◽  
B. Sri Vivek ◽  
...  
Keyword(s):  
Schottky Junction ◽  
Electrical Characteristics ◽  
Insulating Layer ◽  
High K
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