Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study

2004 ◽  
Vol 72 (1-4) ◽  
pp. 10-15 ◽  
Author(s):  
G Ribes ◽  
S Bruyère ◽  
M Denais ◽  
F Monsieur ◽  
V Huard ◽  
...  
Keyword(s):  
Hot Carrier ◽  
Stress Study ◽  
Hot Carrier Stress ◽  
Carrier Energy

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
C. BERGONZONI ◽  
R. BENECCHI ◽  
P. CAPRARA
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Induced Changes

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs

2017 ◽  
Vol 74 ◽  
pp. 74-80 ◽  
Author(s):  
Lihua Dai ◽  
Xiaonian Liu ◽  
Mengying Zhang ◽  
Leqing Zhang ◽  
Zhiyuan Hu ◽  
...  
Keyword(s):  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Stress

Determining plasmonic hot-carrier energy distributions via single-molecule transport measurements

Science ◽  
2020 ◽  
pp. eabb3457 ◽  
Author(s):  
Harsha Reddy ◽  
Kun Wang ◽  
Zhaxylyk Kudyshev ◽  
Linxiao Zhu ◽  
Shen Yan ◽  
...  
Keyword(s):  
Single Molecule ◽  
Plasmonic Nanostructures ◽  
Hot Carriers ◽  
Energy Distributions ◽  
Nanoscale Systems ◽  
Hot Carrier ◽  
Transport Measurements ◽  
Single Molecule Junctions ◽  
Molecule Transport ◽  
Carrier Energy

Hot-carriers in plasmonic nanostructures, generated via plasmon decay, play key roles in applications like photocatalysis and in photodetectors that circumvent band-gap limitations. However, direct experimental quantification of steady-state energy distributions of hot-carriers in nanostructures has so far been lacking. We present transport measurements from single-molecule junctions, created by trapping suitably chosen single molecules between an ultra-thin gold film supporting surface plasmon polaritons and a scanning probe tip, that can provide quantification of plasmonic hot-carrier distributions. Our results show that Landau damping is the dominant physical mechanism of hot-carrier generation in nanoscale systems with strong confinement. The technique developed in this work will enable quantification of plasmonic hot-carrier distributions in nanophotonic and plasmonic devices.

Hot Carrier Stress Effects of SiO2 Passivated AlGaN/GaN High Electron Mobility Transistors

2019 ◽  
Vol 3 (5) ◽  
pp. 213-220 ◽  
Author(s):  
Min-Woo Ha ◽  
Young-Hwan Choi ◽  
Joon-Hyun Park ◽  
Kwang-Seok Seo ◽  
Min-Koo Han
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Hot Carrier ◽  
Stress Effects ◽  
Electron Mobility Transistors ◽  
Hot Carrier Stress
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