scholarly journals Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors

2013 ◽  
Vol 58 (1-2) ◽  
pp. 363-367
Author(s):  
Yoshinari Kamakura ◽  
Toshifumi Ota
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Drain Current ◽  
Silicon Thin Film

P-channel Polycrystalline Silicon Thin Film Transistors on Steel Foil Substrates

2001 ◽  
Vol 664 ◽  
Author(s):  
Ming Wu ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Drain Current ◽  
Silicon Thin Film ◽  
Polysilicon Films ◽  
Source Voltage ◽  
Steel Substrates ◽  
Hydrogenated Amorphous

ABSTRACTWe fabricated self-aligned polycrystalline silicon (polysilicon) thin film transistors on flexible steel substrates. The polysilicon was formed by furnace crystallization of hydrogenated amorphous silicon at 950°C/20sec or 750°C/2min. The TFTs made from these polysilicon films have hole field effect mobilities in the linear regime of 22 cm2·V−1s−1 (950°C) and 14 cm2·V−1s−1 (750°C). The OFF current at 10 V drain-source voltage is 10−10A and the drain current ON/OFF ratio is ∼106.

Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors

2008 ◽  
Vol 47 (10) ◽  
pp. 7798-7802 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Tsuyoshi Kuzuoka ◽  
Yuji Kishida ◽  
Yoshiyuki Shimizu ◽  
Masaharu Kirihara ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Current Model ◽  
Drain Current ◽  
Silicon Thin Film

Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors

1999 ◽  
Vol 86 (12) ◽  
pp. 7083-7086 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Dielectric Effects in Laser-Crystallised Polycrystalline Silicon Thin Film Transistors

1995 ◽  
Vol 377 ◽  
Author(s):  
G. H. Masterton ◽  
R. A. G. Gibson ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Dielectric ◽  
Drain Current ◽  
Generation Process ◽  
Gate Bias ◽  
Silicon Thin Film ◽  
Transient Behaviour ◽  
Current Decay

ABSTRACTWe present experimental results on the transient response of the source-drain current of laser crystallised polycrystalline silicon (poly-Si) thin film transistors (TFTs) over many orders of magnitude in time after the application of a voltage pulse to the gate electrode. This work follows on from similar measurements performed on amorphous silicon (a-Si) TFTs. Results showed a definite change in transient behaviour dependent on the magnitude of the gate bias. At a gate voltage of 5V there was an initial decay then a marked increase in the source-drain current beyond 1000 seconds. This variation of transient behaviour with gate bias was not seen in the a-Si case. For poly-Si the transient behaviour could not be split into different regimes in time (beyond the carrier transit time) whereas for a-Si TFTs the source-drain current showed a logarithmic decay at room temperature up to 100 seconds followed by a power law decay beyond 100 seconds. Our results indicate perhaps that only one mechanism exists for the observed transient decay of current, unlike the a-Si case. Measurements carried out at elevated temperature showed the current decay was independent of temperature indicating that the transient decay may be caused by charge injection via a tunnelling process into interface states, gate dielectric or passivation dielectric. Finally by carrying out measurements on TFTs after moderate positive voltage stressing and on TFTs with specially fabricated gate and passivation dielectrics it has been established that the transient decay is dielectric related and not a defect generation process.

Dimensional Effects on the Drain Current of N- and P-Channel Polycrystalline Silicon Thin Film Transistors

2000 ◽  
Vol 39 (Part 1, No. 7A) ◽  
pp. 3879-3882 ◽  
Author(s):  
Po-Sheng Shih ◽  
Hsiao-Wen Zan ◽  
Ting-Chang Chang ◽  
Tiao-Yuan Huang ◽  
Chun-Yen Chang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Drain Current ◽  
Silicon Thin Film ◽  
Dimensional Effects

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film
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