Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (1) ◽  
pp. 118-120 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Empirical Relationship ◽  
Low Frequency ◽  
Drain Current ◽  
Potential Barrier Height ◽  
Silicon Thin Film

Noise Sources in Polycrystalline Silicon Thin-Film Transistors

2002 ◽  
Vol 744 ◽  
Author(s):  
Il Ki Han ◽  
Young Ju Park ◽  
Woon Jo Cho ◽  
Won Jun Choi ◽  
Jungil Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Barrier Height ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Sources ◽  
New Device

ABSTRACTSources for low frequency noise in polycrystalline silicon thin-film transistors are analytically investigated. The grain boundary is modeled as symmetric Schottky barrier and a new device equation for current conduction in thin-film transistors is presented. At lower currents where barrier height is large enough to provide necessary distribution of time constants for 1/f noise, the number fluctuation via barrier height modulation at the grain boundary is found to be the main noise generation mechanism. At higher currents, mobility and diffusivity fluctuation are found to be dominant

Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin film transistors

1998 ◽  
Vol 83 (3) ◽  
pp. 1469-1475 ◽  
Author(s):  
C. A. Dimitriadis ◽  
J. Brini ◽  
G. Kamarinos ◽  
V. K. Gueorguiev ◽  
Tz. E. Ivanov
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors

1999 ◽  
Vol 86 (12) ◽  
pp. 7083-7086 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

2019 ◽  
Vol 8 (1) ◽  
pp. 211-216
Author(s):  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Matteo Rapisarda ◽  
Alessandro Pecora ◽  
Luigi Mariucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740020
Author(s):  
Yuan Liu ◽  
Yun-Fei En ◽  
Wen-Xiao Fang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Gate Oxide ◽  
Localized States ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
P Type

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

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