Effect of band structure discretization on the performance of full-band Monte Carlo simulation

G. Karlowatz; W. Wessner; H. Kosina

doi:10.1016/j.matcom.2008.02.021

Effect of band structure discretization on the performance of full-band Monte Carlo simulation

Mathematics and Computers in Simulation ◽

10.1016/j.matcom.2008.02.021 ◽

2008 ◽

Vol 79 (4) ◽

pp. 972-979

Author(s):

G. Karlowatz ◽

W. Wessner ◽

H. Kosina

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Band Structure ◽

Full Band

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A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model

Journal of Applied Physics ◽

10.1063/1.355849 ◽

1994 ◽

Vol 75 (1) ◽

pp. 297-312 ◽

Cited By ~ 120

Author(s):

T. Kunikiyo ◽

M. Takenaka ◽

Y. Kamakura ◽

M. Yamaji ◽

H. Mizuno ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Band Structure ◽

Impact Ionization ◽

Full Band ◽

Ionization Model ◽

Full Band Structure

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Calculation of high‐field diffusivity by a many‐particle Monte Carlo simulation including a complete band structure for GaAs

Journal of Applied Physics ◽

10.1063/1.333811 ◽

1984 ◽

Vol 56 (10) ◽

pp. 2793-2795 ◽

Cited By ~ 6

Author(s):

T. Wang ◽

K. Hess

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Band Structure ◽

High Field

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Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions

Journal of Applied Physics ◽

10.1063/1.5144214 ◽

2020 ◽

Vol 127 (15) ◽

pp. 155702 ◽

Cited By ~ 2

Author(s):

Chi-Yin Cheng ◽

Dragica Vasileska

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Real Space ◽

Coulomb Interactions ◽

Full Band ◽

Transport Analysis

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Full-band Monte Carlo simulation of thin InP p+–i–n+ diodes

Microelectronics Journal ◽

10.1016/j.mejo.2004.10.002 ◽

2005 ◽

Vol 36 (1) ◽

pp. 61-65 ◽

Cited By ~ 4

Author(s):

A.H. You ◽

D.S. Ong

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Full Band

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Comparison between wurtzite phase and zincblende phase GaN MESFETs using a full band Monte Carlo simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.824713 ◽

2000 ◽

Vol 47 (3) ◽

pp. 493-497 ◽

Cited By ~ 16

Author(s):

M. Farahmand ◽

K.F. Brennan

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Wurtzite Phase ◽

Full Band

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Influence of Surface Roughness on Ge Gate-All-Around Nanowire nMOSFETs by 3D Full Band Monte Carlo Simulation

10.7567/ssdm.2011.p-3-19 ◽

2011 ◽

Author(s):

K. L. Wei ◽

X. Y. Liu ◽

G. Du

Keyword(s):

Surface Roughness ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Full Band

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Monte Carlo simulation on the solvent structure of biopolymers for the study of the effect of hydration on their energy band structure

The Journal of Chemical Physics ◽

10.1063/1.451680 ◽

1986 ◽

Vol 85 (9) ◽

pp. 5365-5369 ◽

Cited By ~ 6

Author(s):

Chen Runsheng ◽

P. Otto ◽

J. Ladik

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Band Structure ◽

Energy Band ◽

Energy Band Structure ◽

Solvent Structure

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Current impulse response of thin InP p+‐i‐n+ diodes using full band structure Monte Carlo method

Journal of Applied Physics ◽

10.1063/1.2434827 ◽

2007 ◽

Vol 101 (4) ◽

pp. 044502 ◽

Cited By ~ 3

Author(s):

A. H. You ◽

P. L. Cheang

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Band Structure ◽

Impulse Response ◽

Current Impulse ◽

Full Band ◽

Full Band Structure

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Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984566 ◽

2002 ◽

Cited By ~ 1

Author(s):

G. Pennington ◽

N. Goldsman ◽

S. Scozzie ◽

J.M. McGarrity ◽

B. McLean

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Temperature Effects ◽

Full Band

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Monte Carlo simulations of electron transport properties of diamond in high electric fields using full band structure

Journal of Applied Physics ◽

10.1063/1.1682687 ◽

2004 ◽

Vol 95 (9) ◽

pp. 4866-4874 ◽

Cited By ~ 38

Author(s):

Tomokatsu Watanabe ◽

Tokuyuki Teraji ◽

Toshimichi Ito ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Monte Carlo ◽

Electron Transport ◽

Band Structure ◽

Monte Carlo Simulations ◽

Transport Properties ◽

Electric Fields ◽

Full Band ◽

Electron Transport Properties ◽

High Electric Fields ◽

Full Band Structure

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