Photoelectron spectroscopy of hydrogen at the polycrystalline diamond surface

2006 ◽  
Vol 15 (4-8) ◽  
pp. 716-719 ◽  
Author(s):  
D. Ballutaud ◽  
N. Simon ◽  
H. Girard ◽  
E. Rzepka ◽  
B. Bouchet-Fabre
1997 ◽  
Vol 498 ◽  
Author(s):  
P. Reinke ◽  
T. Wrase ◽  
K. Müller ◽  
P. Oelhafen ◽  
R. Locher

ABSTRACTThe modification of the diamond surface through adsorbants offers the opportunity to adjust the electronic and electron emission properties of the surface. In the study presented here, we deposited between 0.1 and 100 monolayers of carbon from an electron beam evaporation source on polycrystalline diamond films. Photoelectron spectroscopy in the ultraviolet and X-ray regime was employed to characterize the surface. Observations on a (100) polycrystalline diamond film show, that the surface is first depleted of hydrogen and subsequent growth of an amorphous carbon film (a-C) occurs on the reconstructed surface. The deposition of these ultrathin carbon films allows the controlled introduction of sp2carbon and p-π states onto the diamond surface. The field emission current increases considerably with the amount of sp2-carbon accumulated at the diamond surface. The current-voltage characteristics only partially follow the Fowler-Nordheim equation, and the results obtained for different films are described and possible emission mechanism discussed.


2017 ◽  
Vol 44 (8) ◽  
pp. 246-248 ◽  
Author(s):  
M. S. Komlenok ◽  
M. A. Dezhkina ◽  
V. V. Kononenko ◽  
A. A. Khomich ◽  
A. F. Popovich ◽  
...  

2000 ◽  
Author(s):  
A. P. Malshe ◽  
A. M. Ozkan ◽  
T. A. Railkar ◽  
K. P. Adhi ◽  
W. D. Brown ◽  
...  

Abstract Meso and micro scale machining is an important and emerging area of research. Various non-traditional and novel tools are being explored for meso and micro machining of non-silicon materials. In this paper, we report etching, micro machining and related phenomena of commercially available single and polycrystalline diamond using a femtosecond pulsed excimer laser (λ = 248 nm, tp ∼ 380 fs). Surface modifications due to single pulse and multiple pulse irradiation of diamond samples, at different energy densities, have been analyzed using Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). Etching rate of single crystal type IIA diamond by femtosecond pulsed excimer laser is also studied. Raman spectroscopy study of the single shot irradiation of diamond with a femto second laser shows the formation of a non-diamond disordered (sp2 bonded) phase on the surface. However, subsequent micro machining of this non-diamond disordered surface, by delivering several shots from the femtosecond laser, results in the removal of the non-diamond disordered layer and the restoration of the diamond surface. It is experimentally shown that the periodicity of the 2-dimensional corrugations written on diamond surface is shorter than the laser wavelength used. 3-dimensional writing on diamond globules during laser etching is also discussed. Further, micro machining of diamond tips is shown to be precise, and without mechanical and chemical damages. Femto second laser is demonstrated as a next-generation tool for mechanical and chemical damage free precision micro machining of the hardest material, diamond.


2012 ◽  
Vol 1395 ◽  
Author(s):  
T. Misu ◽  
K. Koh ◽  
T. Arai

ABSTRACTCVD polycrystalline diamond surfaces were etched using reactive ion etching system with either a conventional stainless steel electrode or MgO sintered ceramic containing electrode. The micro-needle array of high aspect on diamond substrate surfaces obtained with MgO electrode was fabricated by using back-sputtering from MgO electrode. The RMS roughness of diamond substrate surfaces obtained with MgO electrode is higher than those obtained with stainless steel electrode.


1993 ◽  
Vol 8 (11) ◽  
pp. 2840-2844 ◽  
Author(s):  
Ebrahim Heidarpour ◽  
Yoshikatsu Namba

The deposition of diamond phase carbon films on stainless steel substrates by an ionized deposition technique has been studied. A molybdenum grid used during argon ion sputtering had a decisive role in improving the morphology and adhesion ability of the substrate surface. The chemical composition of the surface was obtained by x-ray photoelectron spectroscopy, indicating the reduction of oxygen, carbon, and other contamination, while the surface morphology of the substrate obtained by scanning electron microscopy showed less roughness with a partially smooth surface. Attempts to extract the deposited films from the pretreated substrate surface by a superadhesive agent with an adhesion of 250 kg/cm2 failed, yielding a much stronger adhesion for the pretreated surface. This fact was also supported by examining the surface morphology, hardness, and the resistivity of the films deposited on the same substrates. As for the crystal structure of diamond phase carbon films on stainless steel, selected area diffraction patterns obtained from transmission electron microscopy suggested a mixture of amorphous carbon and polycrystalline diamond components.


2004 ◽  
Vol 19 (11) ◽  
pp. 3206-3213 ◽  
Author(s):  
E. Titus ◽  
D.S. Misra ◽  
Manoj. K. Singh ◽  
Pawan. K. Tyagi ◽  
Abha Misra ◽  
...  

Polycrystalline diamond films with a predominant (100) texture were deposited onto silicon substrates using hot-filament chemical vapor deposition. During film deposition, different temperature gradients were created and imposed laterally across the substrate materials. Films grown under a gradient of 100 °C cm−1 displayed large (100) oriented grains. No crystallite (100) orientation was observed in the as-grown films prepared without a temperature gradient. It was observed that the diamond grain size varied as a function of the gradient. The lower gradient resulted in smaller grains and vice versa. Furthermore, the size of the grains was a function of the deposition time. The orientation of the diamond grains changed gradually across the substrate from (100) to (110) orientation as we scanned from the high-temperature to the low-temperature zone. The films were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy. XRD showed strong (400) reflections in the oriented samples. SEM results indicated the presence of smooth diamond surfaces consisting of predominantly (100) oriented platelets. As the (100) oriented diamond grains were grown on top of the (100) oriented silicon substrates, the faces were mostly aligned parallel to the substrate surface resulting in the deposition of a smooth diamond surface. AFM observations revealed the presence of steps located at the boundaries of the oriented grains. FTIR results showed the characteristic difference in hydrogen bonding in the oriented samples and gave useful information about mechanisms responsible for the orientation. Quantitative analysis was carried out to measure the H content in the films, and it was found that the oriented films contained less hydrogen. Our findings suggest that high saturation of carbon and a concentration gradient of sp3 CH2 species can be the key factor in the oriented growth of (100) diamond grains.


1992 ◽  
Vol 242 ◽  
Author(s):  
Andrew Freedman ◽  
Gary N. Robinson ◽  
Charter D. Stinespring

ABSTRACTDiamond (111) surfaces with the dehydrogenerated 2×1 reconstruction have been exposed to a beam of atomic fluorine at 300 K. The uptake of fluorine, as measured using X-ray photoelectron spectroscopy, is quite efficient and saturates at a coverage of less than a monolayer. Low energy electron diffraction patterns indicate that fluorine termination of the diamond surface produces a lxi bulk-like reconstruction in contrast to the disordered surface produced on the (100) surface.


1992 ◽  
Vol 270 ◽  
Author(s):  
J. Wu ◽  
M. Richter ◽  
R. Cao ◽  
J. Terry ◽  
P. Pianetita ◽  
...  

ABSTRACTDiamond is an important semiconductor which has great potential in high temperature, high power device applications. In the fabrication process of diamond electronic device, doping ofdiamond and understanding of diamond/metal interfaces are important. As a Column V element, Sb is a possible dopant for diamond. Early work reported that Sb is incorporated into diamond by ion implantaion [1]. In addition, Sb plays an important role in Si and Ge heteroepitaxial growth. On the Si or Ge surface one ordered monolayer of Sb occupies the epitaxial sites and saturates the surface dangling bonds, which leads to uniform epitaxial growth. While diamond has the same crystal structure as both silicon and germanium, it has a drastically smaller lattice and much stronger bond. This makes it very difficult to extrapolate antimony's behavior on diamond from its behavior on either silicon or germanium. In this work, we have studied the electronic and geometric structure of Sb on diamond surfaces using photoelectron spectroscopy and low energy electron diffraction. While the exact adsorption sites could not be determined, we find that antimony strongly bonds to the diamond surface. Further, antimony behaves very differently on the diamond(100) face as compared to the diamond(111) face. We also find that neither Sb/diamond system behaves like antimony on either silicon or germanium. We attribute these results to the drastically smaller diamond lattice and the stronger C-C bond.


2019 ◽  
Vol 216 (20) ◽  
pp. 1900360
Author(s):  
Miguel Sinusía Lozano ◽  
Zhuohui Chen ◽  
Oliver A. Williams ◽  
Gonzalo F. Iriarte

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