The Interaction of Carbon with the Diamond Surface: A Photoelectron Spectroscopy Study

1997 ◽  
Vol 498 ◽  
Author(s):  
P. Reinke ◽  
T. Wrase ◽  
K. Müller ◽  
P. Oelhafen ◽  
R. Locher
Keyword(s):  
Photoelectron Spectroscopy ◽  
Carbon Film ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Electron Beam Evaporation ◽  
Diamond Surface ◽  
Field Emission Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Reconstructed Surface

ABSTRACTThe modification of the diamond surface through adsorbants offers the opportunity to adjust the electronic and electron emission properties of the surface. In the study presented here, we deposited between 0.1 and 100 monolayers of carbon from an electron beam evaporation source on polycrystalline diamond films. Photoelectron spectroscopy in the ultraviolet and X-ray regime was employed to characterize the surface. Observations on a (100) polycrystalline diamond film show, that the surface is first depleted of hydrogen and subsequent growth of an amorphous carbon film (a-C) occurs on the reconstructed surface. The deposition of these ultrathin carbon films allows the controlled introduction of sp2carbon and p-π states onto the diamond surface. The field emission current increases considerably with the amount of sp2-carbon accumulated at the diamond surface. The current-voltage characteristics only partially follow the Fowler-Nordheim equation, and the results obtained for different films are described and possible emission mechanism discussed.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Effect of gas pressure on current-voltage characteristics of amorphous carbon film/silicon heterojunction

2007 ◽  
Vol 91 (9) ◽  
pp. 092104 ◽  
Author(s):  
Xili Gao ◽  
Qingzhong Xue ◽  
Lanzhong Hao ◽  
Qun Li ◽  
Qingbin Zheng ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Film ◽  
Gas Pressure ◽  
Amorphous Carbon Film ◽  
Current Voltage ◽  
Current Voltage Characteristics

Deposition of diamond phase carbon films on surface pretreated stainless steel substrate

1993 ◽  
Vol 8 (11) ◽  
pp. 2840-2844 ◽  
Author(s):  
Ebrahim Heidarpour ◽  
Yoshikatsu Namba
Keyword(s):  
Electron Microscopy ◽  
Stainless Steel ◽  
Surface Morphology ◽  
Photoelectron Spectroscopy ◽  
Steel Substrate ◽  
Substrate Surface ◽  
Polycrystalline Diamond ◽  
Decisive Role ◽  
Carbon Films ◽  
Diamond Phase

The deposition of diamond phase carbon films on stainless steel substrates by an ionized deposition technique has been studied. A molybdenum grid used during argon ion sputtering had a decisive role in improving the morphology and adhesion ability of the substrate surface. The chemical composition of the surface was obtained by x-ray photoelectron spectroscopy, indicating the reduction of oxygen, carbon, and other contamination, while the surface morphology of the substrate obtained by scanning electron microscopy showed less roughness with a partially smooth surface. Attempts to extract the deposited films from the pretreated substrate surface by a superadhesive agent with an adhesion of 250 kg/cm2 failed, yielding a much stronger adhesion for the pretreated surface. This fact was also supported by examining the surface morphology, hardness, and the resistivity of the films deposited on the same substrates. As for the crystal structure of diamond phase carbon films on stainless steel, selected area diffraction patterns obtained from transmission electron microscopy suggested a mixture of amorphous carbon and polycrystalline diamond components.

The Biocompatibility of Ti Alloy Improved by Nitrogen-Doped Diamond-Like Carbon Films

2014 ◽  
Vol 711 ◽  
pp. 250-254 ◽  
Author(s):  
Wufanbieke Baheti ◽  
Ming Xin Li ◽  
Fu Guo Wang ◽  
Jin Ge Song ◽  
Long Hua Xu ◽  
...  
Keyword(s):  
Contact Angle ◽  
Photoelectron Spectroscopy ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Measuring Device ◽  
Nitrogen Doped ◽  
Angle Measuring ◽  
N Doping

The nitrogen-doped diamond-like carbon film was prepared on Ti6Al4V alloy by using plasma enhanced chemical vapor deposition (PECVD) technique,and its biocompatibility was studied.The surface morphology,chemical composition and contact angle were measured by scanning electron microscope (SEM),X-ray photoelectron spectroscopy(XPS),Raman Spectrometer and contact angle measuring device. Finally, the proliferation rate and cellular morphology of 3T3-E1 osteoblast cells on different sample surfaces were tested and Image J software was used to statistically analyze the count of the adhered cells. The results showed that cell adhesion and proliferation were significantly (P<0.05) increased on nitrogen-doped diamond-like carbon films , which illustrated that N doping improved the biocompatibility of DLC films. This finding has potential clinical application value to modify titanium alloy for new bone formation.

Effect of Systematic Changes of Ti and Hf Si-oxynitride Alloys by Nitrogen Incorporation as a Bond Constraint on Electrical and Material Properties

2007 ◽  
Vol 996 ◽  
Author(s):  
Sanghyun Lee ◽  
Gerry Lucovsky ◽  
L. B. Fleming ◽  
Jan Luning
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Ternary Alloys ◽  
Flat Band ◽  
Compositional Dependence ◽  
X Ray ◽  
State Splitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
X Ray Absorption

AbstractWe have investigated the effect of Si3N4 content in (Ti(Hf)O2)x(Si3N4)y(SiO2)1-x-y pseudo-ternary alloys by tracking systematic changes of electrical properties, including electrically active defects. Results from Soft x-ray photoelectron spectroscopy (SXPS) studies indicate no detectable hole traps for Ti/Hf Si oxynitrides with Si3N4 content >35%; these alloys have equal concentrations of Ti(Hf)O2 and SiO2, ~30-32%, and additionally are stable for annealing in Ar ambients to temperatures of 1100°C. Derivative near edge x-ray absorption spectroscopy (NEXAS) comparisons for the O K1 edges of TiO2 and optimized Ti Si oxynitride alloys provides a significantly reduced average crystal field d-state splitting from 1.9 to 1.6eV, as well as decreased electron trapping, and is correlated with a four-fold coordination of Ti in the Ti Si oxynitride alloys. The flat band voltage shift with varying frequency from 10 kHz to 1MHz in these alloys is less than 12 mV and the compositional dependence of current-voltage characteristics on Si3N4 composition results in the lowest leakage current at a Si3N4 content of ~40 % with the smallest equivalent oxide thickness (EOT) as well. Based on these studies, Transition Metal (TM) Si oxynitride alloys are anticipated to yield EOT <1 nm for scaled CMOS devises.

Pulsed electrodeposition of diamond-like carbon films

1997 ◽  
Vol 12 (11) ◽  
pp. 3102-3105 ◽  
Author(s):  
Hao Wang ◽  
Ming-Rong Shen ◽  
Zhao-Yuan Ning ◽  
Chao Ye ◽  
He-Sun Zhu
Keyword(s):  
Raman Spectroscopy ◽  
Carbon Films ◽  
Methanol Solution ◽  
Breakdown Field ◽  
Diamond Like Carbon ◽  
Current Voltage ◽  
Chemical Inertness ◽  
Current Voltage Characteristics ◽  
Pulsed Electrodeposition ◽  
Hardness Values

Diamond-like carbon (DLC) films have been prepared by electrolysis of methanol solution using a pulse-modulated source. The deposition rate of the films is enhanced significantly compared to that of dc value. That the films do not contain bonded hydrogen is confirmed by infrared spectra. The structures of the films are characterized by Raman spectroscopy. These films show chemical inertness and hardness values in the range 12.5–19 GPa. Current-voltage characteristics of the films are measured, indicating that the resistivity is in the 107 Ω cm range and the breakdown field is larger than 1 MV cm−1.

Photoelectron spectroscopy of hydrogen at the polycrystalline diamond surface

2006 ◽  
Vol 15 (4-8) ◽  
pp. 716-719 ◽  
Author(s):  
D. Ballutaud ◽  
N. Simon ◽  
H. Girard ◽  
E. Rzepka ◽  
B. Bouchet-Fabre
Keyword(s):  
Photoelectron Spectroscopy ◽  
Polycrystalline Diamond ◽  
Diamond Surface
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