Growth of (100) oriented diamond grains by the application of lateral temperature gradients across silicon substrates

2004 ◽  
Vol 19 (11) ◽  
pp. 3206-3213 ◽  
Author(s):  
E. Titus ◽  
D.S. Misra ◽  
Manoj. K. Singh ◽  
Pawan. K. Tyagi ◽  
Abha Misra ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Film Deposition ◽  
Temperature Gradients ◽  
Diamond Surface ◽  
Silicon Substrates ◽  
Oriented Growth ◽  
Oriented Samples ◽  
Diamond Grain

Polycrystalline diamond films with a predominant (100) texture were deposited onto silicon substrates using hot-filament chemical vapor deposition. During film deposition, different temperature gradients were created and imposed laterally across the substrate materials. Films grown under a gradient of 100 °C cm−1 displayed large (100) oriented grains. No crystallite (100) orientation was observed in the as-grown films prepared without a temperature gradient. It was observed that the diamond grain size varied as a function of the gradient. The lower gradient resulted in smaller grains and vice versa. Furthermore, the size of the grains was a function of the deposition time. The orientation of the diamond grains changed gradually across the substrate from (100) to (110) orientation as we scanned from the high-temperature to the low-temperature zone. The films were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy. XRD showed strong (400) reflections in the oriented samples. SEM results indicated the presence of smooth diamond surfaces consisting of predominantly (100) oriented platelets. As the (100) oriented diamond grains were grown on top of the (100) oriented silicon substrates, the faces were mostly aligned parallel to the substrate surface resulting in the deposition of a smooth diamond surface. AFM observations revealed the presence of steps located at the boundaries of the oriented grains. FTIR results showed the characteristic difference in hydrogen bonding in the oriented samples and gave useful information about mechanisms responsible for the orientation. Quantitative analysis was carried out to measure the H content in the films, and it was found that the oriented films contained less hydrogen. Our findings suggest that high saturation of carbon and a concentration gradient of sp3 CH2 species can be the key factor in the oriented growth of (100) diamond grains.

Area Selective Laser Chemical Vapor Deposition of Diamond

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Lindstam ◽  
M. Boman ◽  
K. Larsson ◽  
G. Stenberg ◽  
J.-O. Carlsson
Keyword(s):  
Substrate Temperature ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Scanning Force Microscopy ◽  
Silicon Substrates ◽  
Laser Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Scanning Force ◽  
Hot Filament

ABSTRACTHigh quality diamond spots were deposited on silicon substrates by a hot filament process combined with laser heating. A mixture of CH4(1.8 vol%) and H2was passed over a tantalum filament having a temperature of about 2200 °C. The substrate temperature was varied by small adjustments of the filament power. A focused laser beam was used to locally raise the temperature on the substrate surface. By a proper choice of filament temperature, background substrate temperature and laser induced temperature, isolated islands of polycrystalline diamond could be deposited on the silicon substrate. The deposited diamond spots were characterized by micro-Raman spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy and scanning force microscopy.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

2018 ◽  
Vol 112 (18) ◽  
pp. 181907 ◽  
Author(s):  
Raju Ahmed ◽  
M. Nazari ◽  
B. L. Hancock ◽  
J. Simpson ◽  
C. Engdahl ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates

Deposition of Ceramic Films by A Novel Pulsed-Gas Mocvd Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Kenneth A. Aitchison ◽  
James D. Barrie ◽  
Joseph Ciofalo
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Flow Reactor ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Oxide Systems ◽  
Metal Organic ◽  
Mocvd Technique

ABSTRACTMetal-Organic Chemical Vapor Deposition (MOCVD) is a versatile technique for the deposition of thin films of metals, semiconductors and ceramics. Commonly used hot wall flow-reactor designs suffer from a number of limitations. Chemical processes occurring in these reactors typically include a combination of homogeneous (gas-phase) and heterogeneous (gas-surface) reactions. These complex conditions are difficult to model and are poorly understood. In addition, flow reactors use large quantities of expensive precursor materials and are not well suited to the formation of abrupt interfaces. We report here a novel MOCVD technique which addresses these problems and enables a more thorough mechanistic understanding of the heterogeneous decomposition pathways of metal-organic compounds. This technique, the low-pressure pulsed gas method, has been demonstrated to provide high deposition rates with excellent control over film thickness. The deposition conditions effectively eliminate homogeneous processes allowing surface-mediated reactions to dominate. This decoupling of gas-phase chemistry from film deposition allows a better understanding of reaction mechanisms and provides better control over film growth. Both single metal oxides and binary oxide systems have been investigated on a variety of substrate materials. Effects of precursor chemistry, substrate surface, temperature and pressure on film composition and morphology will be discussed.

Modeling of Silicon Deposition Yield at Low Temperature by ArF Excimer Laser Photolysis of Disilane

1992 ◽  
Vol 263 ◽  
Author(s):  
B. Fowler ◽  
S. Lian ◽  
S. Krishnan ◽  
C. Li ◽  
L. Jung ◽  
...  
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Growth Surface ◽  
Phase Reaction ◽  
Gas Phase Reactions ◽  
Arf Excimer Laser ◽  
193 Nm

ABSTRACTNon-thermal Chemical Vapor Deposition (CVD) such as laser-enhanced photo-CVD of Si at low temperatures is important for Si-based heterostructures and doping superlattices. Growth kinetic models must be developed to allow these processes to be fully exploited. Intrinsic Si epitaxial layers were deposited at low substrate temperatures of 250-350ºC using the 193 nm output of an ArF excimer laser to directly dissociate Si2H6. The intrinsic film deposition rate can be described by a kinetic model that considers the gas phase reactions of the primary photolysis products and diffusion ofsilicon-bearing molecules to the growth surface. With the laser beam tangential to the substrate surface, growth rates as a function of beam-to-substrate distance have been characterized and indicate that very little gas phase reaction occurs for the dominant Si growth precursor. In order for intrinsic film deposition to result solely from Si2H6 photolysis products, a sticking coefficient ≥ 0.6 must be assigned to the dominant growth precursor in order to fit the observed yield of Si deposited in the films, indicating that the dominant growth precursor in 193 nm Si2H6 photolysis is perhaps H2SiSiH2.

Composite intermediate layer for CVD diamond film on steel substrate

MRS Advances ◽  
2017 ◽  
Vol 2 (41) ◽  
pp. 2211-2216 ◽  
Author(s):  
Andre Contin ◽  
Getúlio de Vasconcelos ◽  
Djoille D. Damm ◽  
Vladimir J. Trava-Airoldi ◽  
Raonei A. Campos ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Diamond Film ◽  
Steel Substrate ◽  
Substrate Surface ◽  
Composite Layer ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Substrate Material ◽  
Film Deposition ◽  
Carbon Solubility

ABSTRACTThe union of the unique diamond properties with steel (most common substrate material) provides a new solution for machine parts under critical mechanical conditions and severe environmental. However, CVD diamond coating directly on steel comes with several issues. The fundamental reasons for the lack of adhesion are an iron catalytic effect, the high carbon solubility in iron and high mismatch in thermal expansion coefficient of diamond and steel. The use of interlayer may solve these issues acting as a diffusion barrier, for both iron and carbon, and match thermal expansion coefficients. Several articles describe the PVD deposition or electroplated interlayer. In the present study, the diamond film coated steel with an intermediate barrier deposited by laser cladding process. In this novel technique, laser irradiation melts the powder (preplaced) and the substrate surface to create the coating on a steel substrate. We used the SiC/Ti and SiC/Cu powder mixtures to create the intermediate barrier. Diamond film deposition was carried out in an HFCVD reactor (Hot Filament Chemical Vapor Deposition). The samples characterization included X-ray Diffraction (XRD); Field Emission Gun - Scanning Electron Microscopy (FEG-SEM) and Raman Scattering Spectroscopy (RSS). Results showed that laser incidence dissociated partially the SiC powder, forming FeSi, Cu3Si phases. Further, the composite layer assisted the high thermal stress relief in steel/diamond interface.

Laser-Induced Chemical Vapor Deposition on Moving Glass Rods

2003 ◽  
Author(s):  
King Hong Kwok ◽  
Wilson K. S. Chiu
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Hot Spot ◽  
Substrate Surface ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Carbon Coatings ◽  
Glass Rods

The feasibility of using pyrolytic Laser-Induced Chemical Vapor Deposition (LCVD) to deposit carbon coatings on moving fused quartz rods have been investigated in this study. This LCVD system uses a CO2 laser to locally heat substrates in open air to create a hot spot. Pyrolysis of hydrocarbon species occurs and subsequently deposits a layer of carbon film onto the substrate surface. The results of this study indicate that the deposition rate of carbon film increases exponentially within the range of laser power, while an increase in traverse velocity of the substrate will also increase the deposition rate until a maximum deposition rate is reached, and further increases in the traverse velocity will decrease the deposition rate. We suspect that this optimal deposition rate is caused by substrate motion, which affects the substrate surface temperature, and consequently the effective surface area available for film deposition.

The Early Stages of Microwave-Assisted Chemical Vapor Deposition of Diamond on Fused Silica Substrates

1992 ◽  
Vol 270 ◽  
Author(s):  
J. Rankin ◽  
Y. Shigesato ◽  
R.E. Boekenhauer ◽  
R. Csencsits ◽  
D.C. Paine ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Particle Morphology ◽  
Fused Silica ◽  
Silicon Substrates ◽  
Microwave Assisted ◽  
Early Stages ◽  
Glass Surfaces

ABSTRACTThe early stages of the microwave assisted chemical vapor deposition of diamond on fused silica and silicon substrates were examined with Raman spectroscopy and scanning electron microscopy. Grain size as a function of time was determined for both substrates. Grains formed on fused silica were larger, with smoother growth surfaces than those formed on silicon substrates under the same conditions. For deposition on silica, the particle morphology changes from cuboid to cubo-octahedral for deposition times between 5 and 15 minutes. Also, the glass surfaces were etched during the pretreatment and deposition stages. These results are discussed in terms of mass transport limited growth, and chemical interactions between the gas-phase and the substrate surface.

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