Fluorine Atom Addition to the Diamond (111) Surface

1992 ◽  
Vol 242 ◽  
Author(s):  
Andrew Freedman ◽  
Gary N. Robinson ◽  
Charter D. Stinespring
Keyword(s):  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Fluorine Atom ◽  
Low Energy ◽  
Diamond Surface ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Atomic Fluorine ◽  
Low Energy Electron ◽  
Diffraction Patterns

ABSTRACTDiamond (111) surfaces with the dehydrogenerated 2×1 reconstruction have been exposed to a beam of atomic fluorine at 300 K. The uptake of fluorine, as measured using X-ray photoelectron spectroscopy, is quite efficient and saturates at a coverage of less than a monolayer. Low energy electron diffraction patterns indicate that fluorine termination of the diamond surface produces a lxi bulk-like reconstruction in contrast to the disordered surface produced on the (100) surface.

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

S-Passivated InP Surfaces Prepared by (NH4)2S Treatments

1992 ◽  
Vol 259 ◽  
Author(s):  
Y. Tao ◽  
A. Yelon ◽  
E. Sacher ◽  
Z.H. Lu ◽  
M.J. Graham
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Low Energy ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Sulfide Solution ◽  
Thermal And Chemical Stability

ABSTRACTS-terminated InP(100) surfaces which are chemically clean and stable were obtained by sulfide solution treatments. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) were used to investigate the thermal and chemical stability of the surfaces. Schottky diodes based on S-passivated InP(100) wafers were used as test devices tostudy the surface electrical properties.

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