Antimony on Diamond: A Comparison to Sb/Si and Sb/Ge

1992 ◽  
Vol 270 ◽  
Author(s):  
J. Wu ◽  
M. Richter ◽  
R. Cao ◽  
J. Terry ◽  
P. Pianetita ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electronic Device ◽  
Diamond Surface ◽  
Heteroepitaxial Growth ◽  
Diamond Surfaces ◽  
Low Energy Electron Diffraction ◽  
Adsorption Sites ◽  
Device Applications ◽  
Low Energy Electron ◽  
Silicon And Germanium

ABSTRACTDiamond is an important semiconductor which has great potential in high temperature, high power device applications. In the fabrication process of diamond electronic device, doping ofdiamond and understanding of diamond/metal interfaces are important. As a Column V element, Sb is a possible dopant for diamond. Early work reported that Sb is incorporated into diamond by ion implantaion [1]. In addition, Sb plays an important role in Si and Ge heteroepitaxial growth. On the Si or Ge surface one ordered monolayer of Sb occupies the epitaxial sites and saturates the surface dangling bonds, which leads to uniform epitaxial growth. While diamond has the same crystal structure as both silicon and germanium, it has a drastically smaller lattice and much stronger bond. This makes it very difficult to extrapolate antimony's behavior on diamond from its behavior on either silicon or germanium. In this work, we have studied the electronic and geometric structure of Sb on diamond surfaces using photoelectron spectroscopy and low energy electron diffraction. While the exact adsorption sites could not be determined, we find that antimony strongly bonds to the diamond surface. Further, antimony behaves very differently on the diamond(100) face as compared to the diamond(111) face. We also find that neither Sb/diamond system behaves like antimony on either silicon or germanium. We attribute these results to the drastically smaller diamond lattice and the stronger C-C bond.

Fluorine Atom Addition to the Diamond (111) Surface

1992 ◽  
Vol 242 ◽  
Author(s):  
Andrew Freedman ◽  
Gary N. Robinson ◽  
Charter D. Stinespring
Keyword(s):  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Fluorine Atom ◽  
Low Energy ◽  
Diamond Surface ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Atomic Fluorine ◽  
Low Energy Electron ◽  
Diffraction Patterns

ABSTRACTDiamond (111) surfaces with the dehydrogenerated 2×1 reconstruction have been exposed to a beam of atomic fluorine at 300 K. The uptake of fluorine, as measured using X-ray photoelectron spectroscopy, is quite efficient and saturates at a coverage of less than a monolayer. Low energy electron diffraction patterns indicate that fluorine termination of the diamond surface produces a lxi bulk-like reconstruction in contrast to the disordered surface produced on the (100) surface.

A refined LEED structural determination for the surface designated Ni (111)–(2 × 2)–S

1989 ◽  
Vol 67 (11) ◽  
pp. 1975-1979 ◽  
Author(s):  
Y. K. Wu ◽  
K. A. R. Mitchell
Keyword(s):  
Bond Length ◽  
Surface Structure ◽  
Order Relation ◽  
Normal Incidence ◽  
Intensity Analysis ◽  
Ion Scattering ◽  
Low Energy Electron Diffraction ◽  
Adsorption Sites ◽  
Low Energy Electron ◽  
A Current

A new intensity analysis with low-energy electron diffraction is reported for the (2 × 2) surface structure obtained by the adsorption of H2S on the (111) surface of nickel. Intensity-versus-energy curves were measured with a video LEED analyzer for 10 diffracted beams at normal incidence, and comparisons were made with intensity curves calculated with multiple-scattering methods for models in which S atoms chemisorb at three-fold coordinated adsorption sites, but with the possibilities of both lateral and vertical relaxations in the local metallic structure. Small adsorbate-induced relaxations are found, but the dominant structural feature is that the S atoms adsorb above the "expected" adsorption sites (i.e. those which continue the regular fee packing) with a 1.50 Å spacing between the S layer and the top-most Ni layer. The S–Ni bond length of 2.10 Å agrees to within 0.02 Å of a prediction using a current bond length – bond order relation, but this value is smaller than two other recent measurements by SEXAFS and ion scattering by 0.06 and 0.10 Å, respectively. This analysis also finds the first two Ni layer spacings are expanded from the bulk value by 2 to 3%. Keywords: LEED, surface structure, S chemisorption, Ni(III) surface.

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications

MRS Advances ◽  
2020 ◽  
Vol 5 (52-53) ◽  
pp. 2727-2735
Author(s):  
Nidhi ◽  
Tashi Nautiyal ◽  
Samaresh Das
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Electronic Device ◽  
Electrical Performance ◽  
High Quality ◽  
X Ray ◽  
Device Applications ◽  
Large Scale Synthesis ◽  
Group 10

AbstractSeveral techniques have been employed for large-scale synthesis of group 10 transition metal dichalcogenides (TMDCs) based on platinum and palladium for nano- and opto-electronic device applications. Nickel Sulphides (NixSy), belonging to group 10 TMDC family, have been widely explored in the field of energy storage devices such as batteries and supercapacitors, etc. and commonly synthesized through the solution process or hydrothermal methods. However, the high-quality thin film growth of NixSy for nanoelectronic applications remains a central challenge. Here, we report the chemical vapor deposition (CVD) growth of NiS2 thin film onto a two-inch SiO2/Si substrate, for the first time. Techniques such as X-ray photoelectron spectroscopy, X-ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, have been used to analyse the quality of this CVD grown NiS2 thin film. A high-quality crystalline thin film of thickness up to a few nanometres (~28 nm) of NiS2 has been analysed here. We also fabricated a field-effect device based on NiS2 thin film using interdigitated electrodes by optical lithography. The electrical performance of the fabricated device is characterized at room temperature. On applying the drain voltage from -2 to +2 V, the device shows drain current in the range of 10-9 A before annealing and in the range of 10-6 A after annealing. This, being comparable to that from devices based on MoS2 and other two-dimensional materials, projects CVD grown NiS2 as a good alternative material for nanoelectronic devices.

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