Resistive switching behavior and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices

2019 ◽  
Vol 19 (4) ◽  
pp. 458-463 ◽  
Author(s):  
Deyuan Lyu ◽  
Cong Hu ◽  
Yuting Jiang ◽  
Na Bai ◽  
Qi Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Behavior

Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene

2016 ◽  
Vol 18 (44) ◽  
pp. 30808-30814 ◽  
Author(s):  
Yanmei Sun ◽  
Junguo Lu ◽  
Chunpeng Ai ◽  
Dianzhong Wen ◽  
Xuduo Bai
Keyword(s):  
Methyl Ester ◽  
Polymer Composite ◽  
Resistive Switching ◽  
Butyric Acid ◽  
Acid Methyl Ester ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Behavior ◽  
Acid Methyl ◽  
Butyric Acid Methyl Ester

Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior.

Magnetic properties and oxygen migration induced resistive switching effect in Y substituted multiferroic bismuth ferrite

2019 ◽  
Vol 21 (28) ◽  
pp. 15854-15860 ◽  
Author(s):  
A. K. Jena ◽  
S. Satapathy ◽  
J. Mohanty
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Bismuth Ferrite ◽  
Switching Behavior ◽  
Switching Effect ◽  
Resistive Switching Behavior ◽  
Low Field ◽  
Multiferroic Bifeo ◽  
Oxygen Migration ◽  
Resistive Switching Effect

Low field magnetic saturation and forming-free resistive switching behavior in non-magnetic modified room temperature multiferroic BiFeO3 thin film.

Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

2015 ◽  
Vol 17 (19) ◽  
pp. 12849-12856 ◽  
Author(s):  
Shuang Gao ◽  
Fei Zeng ◽  
Minjuan Wang ◽  
Guangyue Wang ◽  
Cheng Song ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Binary Oxide ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Behavior ◽  
System P ◽  
Active Metal

The nonpolar resistive switching behavior of the Pt/Ta2O5/Pt structure can be transformed into the bipolar and complementary ones by inserting 2 and 4 nm Ta nanolayers, respectively.

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