Magnetic properties and oxygen migration induced resistive switching effect in Y substituted multiferroic bismuth ferrite

2019 ◽  
Vol 21 (28) ◽  
pp. 15854-15860 ◽  
Author(s):  
A. K. Jena ◽  
S. Satapathy ◽  
J. Mohanty
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Bismuth Ferrite ◽  
Switching Behavior ◽  
Switching Effect ◽  
Resistive Switching Behavior ◽  
Low Field ◽  
Multiferroic Bifeo ◽  
Oxygen Migration ◽  
Resistive Switching Effect

Low field magnetic saturation and forming-free resistive switching behavior in non-magnetic modified room temperature multiferroic BiFeO3 thin film.

Light enhanced resistive switching in BaTiO3/CoFeB/BaTiO3 structure

2016 ◽  
Vol 09 (05) ◽  
pp. 1650052 ◽  
Author(s):  
Hongwei Li ◽  
Bai Sun ◽  
Lujun Wei ◽  
Jianhong Wu ◽  
Xiangjiang Jia ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Conduction Mechanism ◽  
Switching Behavior ◽  
Switching Effect ◽  
Resistive Switching Behavior ◽  
Current Conduction ◽  
Limited Conduction ◽  
Resistive Switching Effect ◽  
Sputtering System

Obvious resistive switching is observed under light irradiation in BaTiO3/CoFeB/BaTiO3 trilayer prepared by magnetron sputtering system while the same sample shows extremely small resistive switching effect in the dark. Under the irradiation of 31.4[Formula: see text]mW/cm2, the ratio of high resistance to low resistance (OFF/ON ratio) of the sample annealed at 600[Formula: see text]C can keep about 80 in more than 70 test cycles without obvious decay. The current conduction mechanism is PF emission in LRS and space charge limited conduction (SCLC) in HRS. The origin of the resistive switching behavior can be explained by considering the trapping and detrapping of charges.

Resistive switching behavior and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices

2019 ◽  
Vol 19 (4) ◽  
pp. 458-463 ◽  
Author(s):  
Deyuan Lyu ◽  
Cong Hu ◽  
Yuting Jiang ◽  
Na Bai ◽  
Qi Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Behavior

Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

2011 ◽  
Vol 1330 ◽  
Author(s):  
Stefan Tappertzhofen ◽  
Marek Hempel ◽  
Ilia Valov ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Ion Transport ◽  
Resistive Switching ◽  
Metal Ion ◽  
Switching Behavior ◽  
Switching Effect ◽  
Proton Mobility ◽  
Metal Ion Transport ◽  
The Impact ◽  
Resistive Switching Effect

ABSTRACTSilicon dioxide based Electrochemical Metallization (ECM) cells were intensively studied as a promising candidate for CMOS compatible non-volatile memory devices. The resistance of ECM cells can be switched between a high resistive (OFF) state and a low resistive (ON) state by applying a sufficient voltage or current pulse. This resistance transition is attributed to the formation and rupture of a few nanometers in diameter metallic filament. However, the metal ion transport which is believed to be responsible for the filamentary switching mechanism is not understood in detail. In case of SiO2 we suppose protons or humidity may enhance the metal ion transport.In this work we report our studies on the proton incorporation in amorphous SiO2 thin films focused on the impact of hydrogen and humidity on the resistive switching effect. The switching behavior was analyzed by current-voltage measurements performed at different ambient conditions. The incorporation of hydrogen has been confirmed by Time-of-Flight Secondary-Ion-Mass-Spectroscopy (ToF-SIMS). The results led to an expansion of the defect model proposed in the literature.

scholarly journals Resistive Switching in Electrodeposited Prussian Blue Layers

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5618
Author(s):  
Lindiomar Borges Avila ◽  
Christian K. Müller ◽  
Dirk Hildebrand ◽  
Fabrício L. Faita ◽  
Bruna F. Baggio ◽  
...  
Keyword(s):  
Prussian Blue ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Switching Effect ◽  
Ohmic Conduction ◽  
Electrical Measurements ◽  
Bipolar Switching ◽  
Composition And Structure ◽  
Resistance State ◽  
Resistive Switching Effect

Prussian blue (PB) layers were electrodeposited for the fabrication of Au/PB/Ag stacks to study the resistive switching effect. The PB layers were characterized by different techniques to prove the homogeneity, composition, and structure. Electrical measurements confirmed the bipolar switching behavior with at least 3 orders of magnitude in current and the effect persisting for the 200 cycles tested. The low resistance state follows the ohmic conduction with an activation energy of 0.2 eV.

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