Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

2009 ◽  
Vol 95 (4) ◽  
pp. 042105 ◽  
Author(s):  
Min Kyu Yang ◽  
Jae-Wan Park ◽  
Tae Kuk Ko ◽  
Jeon-Kook Lee
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Nonvolatile Memory Devices

Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications

2012 ◽  
Vol 51 ◽  
pp. 041102 ◽  
Author(s):  
Tae-Geun Seong ◽  
Mi-Ri Joung ◽  
Jong-Woo Sun ◽  
Min Kyu Yang ◽  
Jeon-Kook Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Memory Applications

Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications

2012 ◽  
Vol 51 (4R) ◽  
pp. 041102 ◽  
Author(s):  
Tae-Geun Seong ◽  
Mi-Ri Joung ◽  
Jong-Woo Sun ◽  
Min Kyu Yang ◽  
Jeon-Kook Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Memory Applications

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

2016 ◽  
Vol 99 ◽  
pp. 75-80
Author(s):  
Arsen Igityan ◽  
Yevgenia Kafadaryan ◽  
Natella Aghamalyan ◽  
Silva Petrosyan
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Switching Behavior ◽  
Zno Films ◽  
Lithium Content ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Glass Substrates ◽  
Ohmic Behavior ◽  
Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

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