Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

2015 ◽  
Vol 17 (19) ◽  
pp. 12849-12856 ◽  
Author(s):  
Shuang Gao ◽  
Fei Zeng ◽  
Minjuan Wang ◽  
Guangyue Wang ◽  
Cheng Song ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Binary Oxide ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Behavior ◽  
System P ◽  
Active Metal

The nonpolar resistive switching behavior of the Pt/Ta2O5/Pt structure can be transformed into the bipolar and complementary ones by inserting 2 and 4 nm Ta nanolayers, respectively.

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

Resistive switching behavior and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices

2019 ◽  
Vol 19 (4) ◽  
pp. 458-463 ◽  
Author(s):  
Deyuan Lyu ◽  
Cong Hu ◽  
Yuting Jiang ◽  
Na Bai ◽  
Qi Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Behavior

Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene

2016 ◽  
Vol 18 (44) ◽  
pp. 30808-30814 ◽  
Author(s):  
Yanmei Sun ◽  
Junguo Lu ◽  
Chunpeng Ai ◽  
Dianzhong Wen ◽  
Xuduo Bai
Keyword(s):  
Methyl Ester ◽  
Polymer Composite ◽  
Resistive Switching ◽  
Butyric Acid ◽  
Acid Methyl Ester ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Behavior ◽  
Acid Methyl ◽  
Butyric Acid Methyl Ester

Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior.

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