Comment on “Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature” [Appl. Phys. Lett. 99, 113509 (2011)]

2012 ◽  
Vol 100 (7) ◽  
pp. 076101 ◽  
Author(s):  
V. V. Atuchin
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Switching Behavior ◽  
Resistive Switching Behavior

Resistive switching behavior and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices

2019 ◽  
Vol 19 (4) ◽  
pp. 458-463 ◽  
Author(s):  
Deyuan Lyu ◽  
Cong Hu ◽  
Yuting Jiang ◽  
Na Bai ◽  
Qi Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Behavior

Magnetic properties and oxygen migration induced resistive switching effect in Y substituted multiferroic bismuth ferrite

2019 ◽  
Vol 21 (28) ◽  
pp. 15854-15860 ◽  
Author(s):  
A. K. Jena ◽  
S. Satapathy ◽  
J. Mohanty
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Bismuth Ferrite ◽  
Switching Behavior ◽  
Switching Effect ◽  
Resistive Switching Behavior ◽  
Low Field ◽  
Multiferroic Bifeo ◽  
Oxygen Migration ◽  
Resistive Switching Effect

Low field magnetic saturation and forming-free resistive switching behavior in non-magnetic modified room temperature multiferroic BiFeO3 thin film.

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

2014 ◽  
Vol 6 (19) ◽  
pp. 16537-16544 ◽  
Author(s):  
Kai-De Liang ◽  
Chi-Hsin Huang ◽  
Chih-Chung Lai ◽  
Jian-Shiou Huang ◽  
Hung-Wei Tsai ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior

Detection of resistive switching behavior based on the Al 2 O 3 /ZnO/Al 2 O 3 structure with alumina buffers

2017 ◽  
Vol 623 ◽  
pp. 8-13 ◽  
Author(s):  
Q. Qiao ◽  
D. Xu ◽  
Y.W. Li ◽  
J.Z. Zhang ◽  
Z.G. Hu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Behavior Based
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