scholarly journals Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination

2017 ◽  
Vol 391 ◽  
pp. 53-58 ◽  
Author(s):  
M. Debiossac ◽  
P. Atkinson ◽  
A. Zugarramurdi ◽  
M. Eddrief ◽  
F. Finocchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Chamber

In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 3814-3818 ◽  
Author(s):  
Toshihiko Hayashi ◽  
Hajime Asahi ◽  
Kazuhiko Yamamoto ◽  
Ken-ichi Hidaka ◽  
Shun-ichi Gonda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Molecular Beam Epitaxy Chamber

scholarly journals The Structure of Al/GaAs Interfaces

1986 ◽  
Vol 77 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
C. Nelson ◽  
R. Gronsky ◽  
J. Washburn ◽  
R. Ludeke
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Molecular Beam Epitaxy Chamber

ABSTRACTThe structure of Al/GaAs interfaces was investigated by high resolution electron microscopy. The Al layers Were deposited in a molecular beam epitaxy chamber with a vacuum base pressure of <1×10∼8 Pa. The GaAs substrate temperature varied during Al deposition from -30°C to 400°C. Deposition of Al on cold substrates £25°C resulted in epitaxial growth of (001) Al on (001) GaAs. Droplets of Ga were observed in samples with the substrate temperature at -30°C (1×2) and 0°C (c(2×8)). Postannealing of the last sample caused formation of the AlGaAs phase. Deposition of Al on hot substrates (150°C and 400°C) resulted in the formation of the AlGaAs phase, which separated (110) oriented Al from (001)GaAs.

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