Electrical characterization of FIB processed metal layers for reliable conductive-AFM on ZnO microstructures

2016 ◽  
Vol 371 ◽  
pp. 83-90 ◽  
Author(s):  
M. Pea ◽  
L. Maiolo ◽  
E. Giovine ◽  
A. Rinaldi ◽  
R. Araneo ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Conductive Afm ◽  
Metal Layers

Electrical characterization of self-assembled single- and double-stranded DNA monolayers using conductive AFM

2006 ◽  
Vol 131 ◽  
pp. 367-376 ◽  
Author(s):  
Hezy Cohen ◽  
Claude Nogues ◽  
Daniela Ullien ◽  
Shirley Daube ◽  
Ron Naaman ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Conductive Afm ◽  
Dna Monolayers ◽  
Double Stranded Dna ◽  
Self Assembled

Electrical Characterization of Individual Cesium Lead Halide Perovskite Nanowires Using Conductive AFM

2020 ◽  
Vol 32 (12) ◽  
pp. 1907812 ◽  
Author(s):  
Avigail Stern ◽  
Sigalit Aharon ◽  
Tal Binyamin ◽  
Abeer Karmi ◽  
Dvir Rotem ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Conductive Afm ◽  
Halide Perovskite ◽  
Lead Halide

Electrical characterization of Cu2ZnSnSe4 solar cells from selenization of sputtered metal layers

2013 ◽  
Vol 535 ◽  
pp. 348-352 ◽  
Author(s):  
Guy Brammertz ◽  
Yi Ren ◽  
Marie Buffière ◽  
Sofie Mertens ◽  
Jurgen Hendrickx ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrical Characterization ◽  
Metal Layers

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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