Work Function Difference Between N-Type μc-Si Gate Electrodes Deposited by Remote Pecvd and P-Type c-Si Substrates in Mos Capacitors

1992 ◽  
Vol 258 ◽  
Author(s):  
D.R. Lee ◽  
G. Lucovsky
Keyword(s):  
Work Function ◽  
Mos Capacitors ◽  
Si Substrates ◽  
Gate Electrodes ◽  
Type C ◽  
Work Function Difference ◽  
Si Films ◽  
P Type ◽  
Mos Device ◽  
Function Difference

ABSTRACTWe have used remote PECVD to deposit highly-doped μc-Si films for use as gate electrodes in MOS capacitors. The flatband voltages of capacitors with different oxide thicknesses have been measured by high-frequency capacitance-voltage and have been used to determine the work function difference between an n-type μc-Si electrode and a p-type c-Si substrate. This value for ϕμs is discussed in terms of a band diagram for the stacked-gate MOS device, and is compared to the expected value.

scholarly journals Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3166
Author(s):  
Sayed Md Tariful Azam ◽  
Abu Saleh Md Bakibillah ◽  
Md Tanvir Hasan ◽  
Md Abdus Samad Kamal
Keyword(s):  
Low Power ◽  
Work Function ◽  
Potential Candidate ◽  
Gate Electrodes ◽  
The Future ◽  
Work Function Difference ◽  
High Transconductance ◽  
Dual Material ◽  
Gate Work Function ◽  
Function Difference

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (∆ϕS-D) of the source (ϕS) and drain (ϕD) side gate electrodes. In particular, the work function of the drain (ϕD) side gate electrodes was varied with respect to the high work function of the source side gate electrode (Pt, ϕS = 5.65 eV) to produce the step gate work function. It was found that the device performance varies with the variation of gate work function difference (∆ϕS-D) due to a change in the electric field distribution, which also changes the carrier (hole) distribution of the device. We achieved low subthreshold slope (SS) and off-state current (Ioff) of 30.89 mV/dec and 0.39 pA/µm, respectively, as well as low power dissipation, when the gate work function difference (∆ϕS-D = 1.02 eV) was high. Therefore, the device can be a potential candidate for the future low power digital applications. On the other hand, high transconductance (gm), high cut-off frequency (fT), and low output conductance (gd) of the device at low gate work function difference (∆ϕS-D = 0.61 eV) make it a viable candidate for the future low power analog applications.

scholarly journals Work function difference of naphthyl end-capped oligothiophene in different crystal alignments studied by Kelvin probe force microscopy

2020 ◽  
pp. 106060
Author(s):  
Mads Nibe Larsen ◽  
Mads Svanborg Peters ◽  
Rodrigo Lemos-Silva ◽  
Demetrio A. Da Silva Filho ◽  
Bjarke Jørgensen ◽  
...  
Keyword(s):  
Work Function ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Work Function Difference ◽  
Function Difference

Measurement of work function difference between Pb/Si(111) and Pb/Ge/Si(111) by high-order Gundlach oscillation

2013 ◽  
Vol 114 (21) ◽  
pp. 214308 ◽  
Author(s):  
Hsu-Sheng Huang ◽  
Wen-Yuan Chan ◽  
Wei-Bin Su ◽  
Germar Hoffmann ◽  
Chia-Seng Chang
Keyword(s):  
Work Function ◽  
High Order ◽  
Work Function Difference ◽  
Function Difference

Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses

Nanoscale ◽  
2020 ◽  
Vol 12 (15) ◽  
pp. 8216-8229
Author(s):  
Hong-Ki Kim ◽  
Soo In Kim ◽  
Seongjun Kim ◽  
Nam-Suk Lee ◽  
Hoon-Kyu Shin ◽  
...  
Keyword(s):  
Work Function ◽  
Structural Properties ◽  
Epitaxial Layer ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Spectroscopic Analyses ◽  
Work Function Difference ◽  
Function Difference

In the defective SiC epitaxial layer, the work function variation was observed by Kelvin probe force microscopy (KPFM), and the work function difference came from the variation of polytype and the disordered surface.

Optical Properties of Free-Standing Ultrahigh Porosity Silicon Films Prepared by Supercritical Drying

1996 ◽  
Vol 452 ◽  
Author(s):  
J. Von Behren ◽  
P. M. Fauchet ◽  
E. H. Chimowitz ◽  
C. T. Lira
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Supercritical Drying ◽  
Silicon Films ◽  
Index Of Refraction ◽  
Free Standing ◽  
Crystal Silicon ◽  
Si Substrates ◽  
Type C ◽  
P Type

AbstractHighly luminescent free-standing porous silicon thin films of excellent optical quality have been manufactured by using electrochemical etching and lift-off steps combined with supercritical drying. One to 50 μm thick free-standing layers made from highly (p+) and moderately (p) Boron doped single crystal silicon (c-Si) substrates have been produced with porosities (P) up to 95 %. The Fabry-Pérot fringes observed in the transmission and photoluminescence (PL) spectra are used to determine the refractive index. At the highest P the index of refraction is below 1.2 from the IR to 2 eV. The absorption coefficients follow a nearly exponential behavior in the energy range from 1.2 eV and 4 eV. The porosity corrected absorption spectra of free-standing films made from p type c-Si substrates are blue shifted with respect to those prepared from p+ substrates. For P > 70 % a blue shift is also observed in PL. At equal porosities the luminescence intensities of porous silicon films made from p+ and p type c-Si are different by one order of magnitude.

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