Evolution of SiGe nanoclusters and micro defects in the Si1−xGex layer fabricated by two-step ion implantation and subsequent thermal annealing

2011 ◽  
Vol 257 (22) ◽  
pp. 9260-9263 ◽  
Author(s):  
Wenting Xu ◽  
Hailing Tu ◽  
Qinghua Xiao ◽  
Qing Chang ◽  
Zongfeng Li ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Subsequent Thermal Annealing

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

2002 ◽  
Vol 91 (3) ◽  
pp. 1520-1524 ◽  
Author(s):  
Ch. Schubert ◽  
U. Kaiser ◽  
A. Hedler ◽  
W. Wesch ◽  
T. Gorelik ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Nanocrystal Formation ◽  
Subsequent Thermal Annealing

scholarly journals Study of color centers in radiation-modified diamonds

2021 ◽  
Vol 2103 (1) ◽  
pp. 012223
Author(s):  
M V Kozlova ◽  
A A Khomich ◽  
R A Khmelnitsky ◽  
A A Averin ◽  
A I Kovalev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Fast Neutron ◽  
Thermal Annealing ◽  
Neutron Irradiation ◽  
Excitation Power ◽  
Temperature Sensing ◽  
Color Centers ◽  
Fast Neutron Irradiation ◽  
Subsequent Thermal Annealing

Abstract We report on the optical properties of He-related color centers created by He-ion implantation and subsequent thermal annealing in natural diamonds, including the temperature (300–700 K) and excitation power (1–1800 kW/cm2)-dependent photoluminescence (PL) measurements. The prospects for the use of He-implanted diamonds for temperature sensing are discussed. The effect of fast neutron irradiation on the optical properties of Si-V color centers in CVD diamonds were also examined.

scholarly journals The microstructure of Si surface layers after plasma-immersion He+ion implantation and subsequent thermal annealing

2017 ◽  
Vol 50 (2) ◽  
pp. 539-546 ◽  
Author(s):  
Andrey Lomov ◽  
Kirill Shcherbachev ◽  
Yurii Chesnokov ◽  
Dmitry Kiselev
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Changes ◽  
Layer Structure ◽  
Characteristic Size ◽  
High Dose ◽  
X Ray ◽  
P Type ◽  
Subsequent Thermal Annealing

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOxlayer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.

scholarly journals Structural properties of the formation of zinc-containing nanoparticles obtained by ion implantation in Si (001) and subsequent thermal annealing

2017 ◽  
Vol 3 (3) ◽  
pp. 104-109 ◽  
Author(s):  
Ksenia B. Eidelman ◽  
Nataliya Yu. Tabachkova ◽  
Kirill D. Shcherbachev ◽  
Yuri N. Parkhomenko ◽  
Vladimir V. Privesentsev ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Subsequent Thermal Annealing

Deep Level Spectra of Ion-Implantation Defects and Slip Dislocations Introduced by CO2 Laser

1985 ◽  
Vol 52 ◽  
Author(s):  
X. M. Bao ◽  
X. Y. Zhang ◽  
C. E. Liu ◽  
X. Q. Zheng
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Laser Annealing ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Dislocation Core ◽  
Energy Spectra ◽  
High Power Density ◽  
Subsequent Thermal Annealing ◽  
Plasma Annealing

ABSTRACTThe CW CO2 laser annealing is an effective method for removing deep level defects induced by ion-implantation. The available laser density range is 350˜600 W/cm2, which is consistent with that needed to fully activate implanted impurities. At high power density (>600W/cm2 ) slip dislocations can be induced. The energy spectra of dislocations were measured with DLTS technique. One peak at Ev + 0.33eV in p-Si and two at peaks at Ec −0.37eV and Ec −0.50eV in n-Si have been found. These peaks are stable during thermal annealing at high temperature. But they can be passivated with hydrogen plasma annealing and reactivated by subsequent thermal annealing in vacuum. The dislocation core is reconstructed.

Plasmonic nanoparticles embedded in single crystals synthesized by gold ion implantation for enhanced optical nonlinearity and efficient Q-switched lasing

Nanoscale ◽  
2018 ◽  
Vol 10 (9) ◽  
pp. 4228-4236 ◽  
Author(s):  
W. J. Nie ◽  
Y. X. Zhang ◽  
H. H. Yu ◽  
R. Li ◽  
R. Y. He ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Au Nanoparticles ◽  
Optical Nonlinearity ◽  
Plasmonic Nanoparticles ◽  
Subsequent Thermal Annealing ◽  
Gold Ion

We report on the synthesis of embedded gold (Au) nanoparticles (NPs) in Nd:YAG single crystals using ion implantation and subsequent thermal annealing.

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