Raman scattering study on the effects of Ga ion implantation and subsequent thermal annealing for AlSb grown by molecular‐beam epitaxy

1993 ◽  
Vol 74 (4) ◽  
pp. 2300-2305 ◽  
Author(s):  
S. G. Kim ◽  
H. Asahi ◽  
M. Seta ◽  
S. Emura ◽  
H. Watanabe ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Scattering Study ◽  
Subsequent Thermal Annealing

Raman Scattering Study of Mixing of GaAs/AlAs Superlattices by Ion Implantation and Rapid Thermal Annealing

1986 ◽  
Vol 69 ◽  
Author(s):  
D. Kirillov ◽  
P. Ho ◽  
G. A. Davis
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Damaged Material ◽  
Different Types ◽  
Scattering Study

AbstractRaman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Raman scattering study of GaAs crystalline layers grown by molecular beam epitaxy at low temperature

2000 ◽  
Vol 88 (7) ◽  
pp. 3948 ◽  
Author(s):  
H. Sano ◽  
A. Suda ◽  
T. Hatanaka ◽  
G. Mizutani ◽  
N. Otsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Scattering Study

Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering study

2007 ◽  
Vol 20 (S1) ◽  
pp. 116-119 ◽  
Author(s):  
Jordi Ibáñez ◽  
Esther Alarcón-Lladó ◽  
Ramon Cuscó ◽  
Lluís Artús ◽  
Mohamed Henini ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Scattering Study

Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy

2009 ◽  
Vol 24 (11) ◽  
pp. 115019 ◽  
Author(s):  
E Alarcón-Lladó ◽  
J Ibáñez ◽  
R Cuscó ◽  
L Artús ◽  
S V Novikov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Cubic Gan ◽  
Scattering Study
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