Plasmonic nanoparticles embedded in single crystals synthesized by gold ion implantation for enhanced optical nonlinearity and efficient Q-switched lasing

Nanoscale ◽  
2018 ◽  
Vol 10 (9) ◽  
pp. 4228-4236 ◽  
Author(s):  
W. J. Nie ◽  
Y. X. Zhang ◽  
H. H. Yu ◽  
R. Li ◽  
R. Y. He ◽  
...  

We report on the synthesis of embedded gold (Au) nanoparticles (NPs) in Nd:YAG single crystals using ion implantation and subsequent thermal annealing.

Vacuum ◽  
2013 ◽  
Vol 89 ◽  
pp. 132-135
Author(s):  
J.X. Xu ◽  
X.H. Xiao ◽  
F. Ren ◽  
X.D. Zhou ◽  
G.X. Cai ◽  
...  

2002 ◽  
Vol 91 (3) ◽  
pp. 1520-1524 ◽  
Author(s):  
Ch. Schubert ◽  
U. Kaiser ◽  
A. Hedler ◽  
W. Wesch ◽  
T. Gorelik ◽  
...  

2021 ◽  
Vol 2103 (1) ◽  
pp. 012223
Author(s):  
M V Kozlova ◽  
A A Khomich ◽  
R A Khmelnitsky ◽  
A A Averin ◽  
A I Kovalev ◽  
...  

Abstract We report on the optical properties of He-related color centers created by He-ion implantation and subsequent thermal annealing in natural diamonds, including the temperature (300–700 K) and excitation power (1–1800 kW/cm2)-dependent photoluminescence (PL) measurements. The prospects for the use of He-implanted diamonds for temperature sensing are discussed. The effect of fast neutron irradiation on the optical properties of Si-V color centers in CVD diamonds were also examined.


2017 ◽  
Vol 50 (2) ◽  
pp. 539-546 ◽  
Author(s):  
Andrey Lomov ◽  
Kirill Shcherbachev ◽  
Yurii Chesnokov ◽  
Dmitry Kiselev

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOxlayer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.


2011 ◽  
Vol 257 (22) ◽  
pp. 9260-9263 ◽  
Author(s):  
Wenting Xu ◽  
Hailing Tu ◽  
Qinghua Xiao ◽  
Qing Chang ◽  
Zongfeng Li ◽  
...  

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