Surface morphological influence on charging at metal–insulator interface in XPS depth profiling

2004 ◽  
Vol 228 (1-4) ◽  
pp. 292-296 ◽  
Author(s):  
Y. Mori ◽  
M. Tanemura ◽  
S. Tanemura
Keyword(s):  
Depth Profiling ◽  
Metal Insulator ◽  
Insulator Interface

Research on the Type of Electrical Contact at Metal-Insulator Interface

2011 ◽  
Vol 383-390 ◽  
pp. 5154-5157
Author(s):  
Qian Peng ◽  
Li Ren Zhou
Keyword(s):  
Electrical Contact ◽  
Depletion Region ◽  
Energy Band Structure ◽  
Metal Insulator ◽  
Band Bending ◽  
Whole Process ◽  
Insulator Interface ◽  
Metal Insulator Metal ◽  
Electrode Metal ◽  
Nor Band

This paper takes metal-insulator-metal system as example and investigates the main types of electrical contact through the view of energy band structure, to analyze the whole process of the transition from ohm contact to barrier contact. Ohm contact, which promotes charges injection from electrode (metal) to insulator, can be used as storage of charge carrier, which is body limited; it can also be regarded as a type of contact that forms an accumulation layer extending from the interface to the interior of the insulator. Whereas, barrier contact is a type of contact which forms a depletion region extending from the interface to the interior of insulator. As for this type of contact, electron injection from metal tends to the state of saturation. The characteristic of neutral contact is that there is no space charge in the insulator, nor band bending, which means the boundary of conduction band and valence band up to the interface is flat.

Au-Cluster Redistribution During Nanosecond Laser-Annealing of Metal/Insulator Matrices

1985 ◽  
Vol 51 ◽  
Author(s):  
W. Pamler ◽  
E. E. Marinero ◽  
M. Chen ◽  
V. B. Jipson
Keyword(s):  
Laser Annealing ◽  
Depth Profiling ◽  
Nanosecond Laser ◽  
Laser Interaction ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
Time Resolved ◽  
Au Clusters ◽  
Excimer Laser Radiation ◽  
Compositional Changes

ABSTRACTWe report on the growth and redistribution of Au clusters caused by nanosecond laser interaction of Aux(TeO2 )1−x thin films with intense excimer laser radiation. This laser-induced phenomenon is studied in a time-resolved manner using transient reflectivity and transmissivity techniques. Structural and compositional changes are investigated using Rutherford Backscattering, XPS depth profiling, x-ray diffraction and conductivity measurements. Our studies indicate that melting of the binary structure initializes segregation, growth and coalescence of Au crystallites in the amorphous TeO2 matrix.

Electronic and Chemical Analysis of a Metal-Insulator Interface Utilizing Transmission Electron Energy Loss Spectroscopy at 5Å Spatial Resolution

1984 ◽  
Vol 41 ◽  
Author(s):  
Michael Scheinfein ◽  
Michael Isaacson
Keyword(s):  
Chemical Analysis ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Valence Shell ◽  
Metal Insulator ◽  
Insulator Interface ◽  
Transmission Electron ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

AbstractUsing a 0.5 nm diameter probe of 100 keV electrons, we have been able to detect significant changes in the transmission electron energy loss spectra in the region of valence shell and L23 shell excitation within a spatial extent of 0.4 nm of an Al-AlF3 interface. The spectra have been recorded with a dose significantly less than the critical dose for destruction of the AlF3.

Electrical determination of spin mixing conductance at metal/insulator interface using inverse spin Hall effect

2012 ◽  
Vol 111 (7) ◽  
pp. 07C307 ◽  
Author(s):  
R. Takahashi ◽  
R. Iguchi ◽  
K. Ando ◽  
H. Nakayama ◽  
T. Yoshino ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Metal Insulator ◽  
Insulator Interface ◽  
Inverse Spin Hall Effect

Electrophysical Characteristics of Tantalum Oxide Structures

2020 ◽  
Vol 22 (8) ◽  
pp. 433-437
Author(s):  
V.S. Belov ◽  
◽  
Keyword(s):  
Tantalum Oxide ◽  
Atomic Layer ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Metal Insulator ◽  
Potential Barriers ◽  
Insulator Interface ◽  
Layer Deposition ◽  
Current Voltage ◽  
Tantalum Oxide Film

In this work has been developed a technology for obtaining nickel-insulator-aluminum structure with 7 nm thick tantalum oxide deposited by atomic-layer deposition. An asymmetric current-voltage characteristic of the structure is obtained, and the heights of potential barriers at the metal-insulator interface are determined. The permittivity of the tantalum oxide film has been determined experimentally in this work.

scholarly journals Quantification of interfacial spin-charge conversion in hybrid devices with a metal/insulator interface

2020 ◽  
Vol 117 (14) ◽  
pp. 142405 ◽  
Author(s):  
Cristina Sanz-Fernández ◽  
Van Tuong Pham ◽  
Edurne Sagasta ◽  
Luis E. Hueso ◽  
Ilya V. Tokatly ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Insulator Interface ◽  
Hybrid Devices
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