Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
2004 ◽
Vol 224
(1-4)
◽
pp. 292-296
◽
2017 ◽
Vol 35
(24)
◽
pp. 5306-5310
◽
Keyword(s):
2017 ◽
Vol 11
(4)
◽
pp. 313-317
◽
1998 ◽
Vol 51
(1-3)
◽
pp. 166-169
◽
2019 ◽
Vol 11
(17)
◽
pp. 15813-15820
◽