A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

2002 ◽  
Vol 23 (5) ◽  
pp. 261-263 ◽  
Author(s):  
M. Kumar ◽  
Haitao Liu ◽  
J.K.O. Sin
Keyword(s):  
Epitaxial Growth ◽  
High Performance ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Selective Epitaxial Growth

Selective Epitaxial Growth Followed by in Situ Deposition of a- or Poly-Si for Seeded Soi.

1987 ◽  
Vol 107 ◽  
Author(s):  
L. Karapiperis ◽  
G. Garry ◽  
D. Dieumegard
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Zone Melting ◽  
Solid Phase Epitaxy ◽  
3D Integration ◽  
Thermal Budget ◽  
Selective Epitaxial Growth ◽  
In Situ Deposition ◽  
Thermal Compatibility

AbstractSelective Epitaxial Growth (SEG) techniques find a growing number of applications in the field of Si IC's, such as, lateral isolation, vertical interconnects, seeded recrystallisation etc. In the present work, the use of Si SEG by CVD combined with in-situ deposition of a- or poly-Si for the improvement of SOI obtained by Zone Melting Recrystallisation (ZMR) or by Lateral Solid Phase Epitaxy (SPE) is described. The principle application for which the present work is intended is Three Dimentional (3D) Integration. One of the main constraints imposed on process is thermal compatibility with previously executed process steps. Hence the need to reduce the thermal budget for the Selective Epitaxial Growth as much as possible.

48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth

2017 ◽  
Vol 35 (24) ◽  
pp. 5306-5310 ◽  
Author(s):  
Zhi Liu ◽  
Fan Yang ◽  
Wenzhou Wu ◽  
Hui Cong ◽  
Jun Zheng ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Performance ◽  
Zero Bias ◽  
Selective Epitaxial Growth

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates

2003 ◽  
Vol 762 ◽  
Author(s):  
M. S. Mason ◽  
C.M. Chen ◽  
H.A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Transmission Electron ◽  
Silicon Growth

AbstractWe investigate low-temperature epitaxial growth of thin silicon films on Si [100] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300 nm thick epitaxial layers at 300°C on silicon [100] substrates using a high H2:SiH4 ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.

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