Texturing effects in molybdenum and aluminum nitride films correlated to energetic bombardment during sputter deposition

2001 ◽  
Vol 72 (5) ◽  
pp. 541-550 ◽  
Author(s):  
T.P. Drüsedau ◽  
K. Koppenhagen ◽  
J. Bläsing ◽  
T.-M. John
Keyword(s):  
Aluminum Nitride ◽  
Sputter Deposition

Optical Behavior of Sputter-Deposited Aluminum Nitride: Relationship to Film Cheiistry

1985 ◽  
Vol 47 ◽  
Author(s):  
C. J. G. Kubiak ◽  
C. R. Aita ◽  
F. S. Hickernell ◽  
S. J. Joseph
Keyword(s):  
Aluminum Nitride ◽  
Sputter Deposition ◽  
Aluminum Target ◽  
Reactive Sputter Deposition ◽  
Sputter Deposited ◽  
Excited Nitrogen ◽  
Amorphous Quartz ◽  
Quartz Substrates ◽  
Optical Behavior

ABSTRACTFilms which are nominally aluminum nitride were grown by reactive sputter deposition using an aluminum target and rf-excited nitrogen discharges operated at power levels from 100 to 800W. Depositions were made on water-cooled (111)-cut Si and amorphous quartz substrates. The optical behavior of these films and its relationship to chemistry is discussed in the present paper.

Measurement of intrinsic stresses during growth of aluminum nitride thin films by reactive sputter deposition

1993 ◽  
Vol 74 (4) ◽  
pp. 2411-2414 ◽  
Author(s):  
W. J. Meng ◽  
J. A. Sell ◽  
G. L. Eesley ◽  
T. A. Perry
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Sputter Deposition ◽  
Reactive Sputter Deposition

Epitaxial Aluminum Nitride Film on Silicon(111) Grown by Reactive DC Magnetron Sputter Deposition

1992 ◽  
Vol 1 (1) ◽  
pp. 3-7 ◽  
Author(s):  
Maria C. Militello ◽  
Stephen W. Gaarenstroom ◽  
Steven J. Simko
Keyword(s):  
Aluminum Nitride ◽  
Sputter Deposition ◽  
Nitride Film ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

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