Measurement of intrinsic stresses during growth of aluminum nitride thin films by reactive sputter deposition

1993 ◽  
Vol 74 (4) ◽  
pp. 2411-2414 ◽  
Author(s):  
W. J. Meng ◽  
J. A. Sell ◽  
G. L. Eesley ◽  
T. A. Perry
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Sputter Deposition ◽  
Reactive Sputter Deposition

Application of ZnO to Passivate the GaN-based Device Structures

2007 ◽  
Vol 1035 ◽  
Author(s):  
Eliana Kaminska ◽  
Anna Piotrowska ◽  
Marie-Antoinette di Forte Poisson ◽  
Sylvain Delage ◽  
Hacene Lahreche ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
High Resistivity ◽  
Leakage Currents ◽  
Gan Hemt ◽  
Reactive Sputter Deposition ◽  
Device Structures ◽  
Hygroscopic Nature ◽  
Output Characteristics ◽  
Lattice Matched

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

Reactive sputter deposition of crystalline Cr/C/F thin films

1994 ◽  
Vol 18 (5-6) ◽  
pp. 251-256 ◽  
Author(s):  
M.J. O'Keefe ◽  
J.M. Rigsbee
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Reactive Sputter Deposition

Reactive sputter deposition and properties of TaxN thin films

2002 ◽  
Vol 64 (1-4) ◽  
pp. 289-297 ◽  
Author(s):  
T Riekkinen ◽  
J Molarius ◽  
T Laurila ◽  
A Nurmela ◽  
I Suni ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Reactive Sputter Deposition

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Effect of Electroless Copper on the Growth of ZnO Nanowires

2005 ◽  
Vol 20 (9) ◽  
pp. 2348-2353 ◽  
Author(s):  
Wen-Ting Chiou ◽  
Wan-Yu Wu ◽  
Jyh-Ming Ting
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Average Length ◽  
Average Diameter ◽  
Sputter Deposition ◽  
Zno Nanowires ◽  
Zno Thin Films ◽  
Silicon Substrates ◽  
Reactive Sputter Deposition ◽  
Electroless Copper

ZnO nanowires along with ZnO thin films were obtained on copper-metallized silicon substrates using an radio frequency-reactive sputter-deposition technique. Residual tensile stresses were found in both the copper layer and the ZnO layer. The ZnO nanowires were observed exclusively at the grain boundaries of the ZnO thin films. The average diameter of ZnO nanowires varies only slightly with the ZnO deposition time, while the average length increases linearly with the ZnO deposition time. Based on the observations a growth model involving stress-assisted diffusion of copper and reaction-controlled catalytic growth of ZnO nanowires is suggested.

MULTI-TARGET REACTIVE SPUTTER DEPOSITION OF LEAD-ENRICHED Pb(Zr,Ti)O3 THIN FILMS

2006 ◽  
Vol 80 (1) ◽  
pp. 189-195 ◽  
Author(s):  
G. SUCHANECK ◽  
WEN-MEI LIN ◽  
G. GERLACH ◽  
A. DEYNEKA ◽  
L. JASTRABIK
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Reactive Sputter Deposition
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