Ultrafast UV-Laser Induced Oxidation of Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T.E. Orlowski ◽  
H. Richter
Keyword(s):  
Silicon Dioxide ◽  
Laser Excitation ◽  
Pulsed Laser ◽  
Silicon Substrates ◽  
Ir Absorption ◽  
Uv Laser ◽  
High Quality ◽  
Thermally Grown Oxides ◽  
Temperature Method ◽  
Cv Measurements

ABSTRACTA new low temperature method of forming high quality patterned silicon dioxide (SiO2) layers up to a thickness of 1 μm on silicon substrates is presented. UV pulsed laser excitation in an oxygen environment is utilized. IR absorption spectroscopy, CV and IV measurements are employed to characterize the oxide films and the Si-SiO2 interface. No shift but a significant broadening of the Si-O stretching mode compared with thermally grown oxides is found indicating that the laser grown oxide is stoichiometric but with a higher degree of disorder. From CV measurements we deduce a fixed oxide charge near the Si-SiO2 interface of 6×1010/cm2 for oxides that have been thermally annealed in O2 following the laser induced growth making this material a candidate for applications in semiconductor devices.

Photoinduced infrared absorption spectra of CuCl quantum dots in NaCl

2001 ◽  
Vol 15 (28n30) ◽  
pp. 4005-4008
Author(s):  
K. Yamanaka ◽  
K. Edamatsu ◽  
T. Itoh
Keyword(s):  
Absorption Spectra ◽  
Transient Absorption ◽  
Laser Excitation ◽  
Excited State Absorption ◽  
Hole Burning ◽  
Ir Absorption ◽  
Uv Laser ◽  
Defect Center ◽  
Transient Absorption Spectra ◽  
Peak Energy

We have studied infrared transient absorption spectra of CuCl QDs grown inside a NaCl matrix under tunable UV laser excitation on resonance with the confined excitons. In addition to the transient excited-state absorption, there appears induced IR absorption with lifetime much longer than that of the confined exciton. The peak energy remains at ~0.3 eV regardless of the QD size. The optical density is proportional to the square root of the UV laser power. The decay of the induced absorption is logarithmic on time and is accelerated by the irradiation of light below the band gap. We assign this absorption to be originated from the electron-bound defect center called I e center generated in the NaCl side of the interface and discuss it phenomenon in relation with photo-irradiation effects, such as photofatigue, blinking of the luminescence and hole burning.

Mechanics analysis of femtosecond laser-induced blisters produced in thermally grown oxide on Si(100)

2010 ◽  
Vol 25 (6) ◽  
pp. 1087-1095 ◽  
Author(s):  
Joel P. McDonald ◽  
M.D. Thouless ◽  
Steven M. Yalisove
Keyword(s):  
Silicon Dioxide ◽  
Thermal Effects ◽  
Pulsed Laser ◽  
Thermally Grown Oxide ◽  
Film Stress ◽  
Silicon Substrates ◽  
Residual Film ◽  
Mechanics Analysis ◽  
Pulsed Laser Irradiation

Blister features produced by laser-induced delamination of silicon dioxide from silicon substrates were analyzed with thin-film buckling mechanics. These analyses revealed the role of the interaction between the material and the femtosecond (fs)-pulsed laser on blister formation. In particular, it was deduced that the magnitude of the compressive residual film stress within the irradiated region appeared to exceed the intrinsic residual stress obtained from wafer curvature techniques. This apparent increase in the compressive stress after fs-pulsed laser irradiation may be caused by a modification of the oxide, which resulted in a local rarefaction of the film. The results demonstrated important features of the interaction between materials and fs-pulsed laser, including the presence of subtle modification thresholds and the limited role of thermal effects.

Low-energy femtosecond pulsed laser deposition of cerium (IV) oxide thin films on silicon substrates

2021 ◽  
pp. 126323
Author(s):  
Joseph A. De Mesa ◽  
Angelo P. Rillera ◽  
Melvin John F. Empizo ◽  
Nobuhiko Sarukura ◽  
Roland V. Sarmago ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Low Energy ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Oxide Thin Films ◽  
Femtosecond Pulsed Laser

High quality Hastelloy films deposited by XeCl pulsed laser ablation

2003 ◽  
Vol 208-209 ◽  
pp. 669-675 ◽  
Author(s):  
A Zocco ◽  
A Perrone ◽  
M.F Vignolo ◽  
S Duhalde ◽  
I Avram ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality

Large-sized-mismatched group-V element doped ZnO films fabricated on silicon substrates by pulsed laser deposition

Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1306-1309 ◽  
Author(s):  
Xiaofeng Xu ◽  
Yiqun Shen ◽  
Ning Xu ◽  
Wei Hu ◽  
Jushui Lai ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Silicon Substrates ◽  
Group V ◽  
Doped Zno

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

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