A Crystallographic Analysis of the Ductile-Brittle Transition In Body-Centered Cubic Single Crystals

JOM ◽  
1953 ◽  
Vol 5 (12) ◽  
pp. 1650-1651
Author(s):  
A. J. Opinsky
2004 ◽  
Vol 449-452 ◽  
pp. 31-36
Author(s):  
Yasuhiro Miura ◽  
Kentaro Ihara

An experimental study on the microstructure development and stress–strain behavior during high temperature deformation of aluminum (Al) single crystals was made by using X-ray Laue technique and the electron backscatter pattern (EBSP) technique. The main purpose was to clarify the process of dynamic recrystallization (DRX). The measured stress-strain curves with large stress peaks and the new Laue spots without streaks at around the stress peaks confirmed the occurrence of DRX in Al single crystals with initial compression axis <111>, <011> or <001>. Crystallographic analysis by the Laue technique and EBSP technique show that the DRX grain and the matrix have an <121> axis in common in the <111> crystal, an <101> axsis in the <011> and <001> crystals. For the <111> crystal, the unrecrystallized region near the DRX grain consists of subgrains adjoined each other with <112> tilt boundaries and the size of subgrains becomes smaller and the misfit at subgrain boundaries becomes larger as the DRX grain boundaries are approached. These results suggest that DRX grains are nucleated through the development of subgrains.


2010 ◽  
Vol 40 (3) ◽  
pp. 219-224 ◽  
Author(s):  
G. M. Rusakov ◽  
M. L. Lobanov ◽  
A. A. Redikul’tsev ◽  
I. V. Kagan

2017 ◽  
Vol 198 ◽  
pp. 16-18 ◽  
Author(s):  
Xinyu Shu ◽  
Yan Lu ◽  
Tianjiao Xin ◽  
Zhipeng Li ◽  
Yanhui Chen ◽  
...  

1993 ◽  
Vol 322 ◽  
Author(s):  
Y. Umakoshi ◽  
T. Nakashima ◽  
T. Nakano ◽  
E. Yanagisawa

AbstractThe mechanical and plastic behaviors of refractory silicide single crystals with Cllb (MoSi2), C40 (CrSi2, TaSi2 and NbSi2), D88 (Ti5Si3) and Cl (CoSi2 and (Co0.9Ni0.1)Si2) structures were investigated. The C40–type silicides were deformed by (0001)<1120> slip. Their yield stress decreased sharply with increasing temperature but NbSi2 and TaSi2 which were deformable even at low temperatures, exhibited anomalous strengthening around 1350°C. Deformation of Ti5Si3 whose ductile-brittle transition occurred around 1300°C was controlled by twins and the brittle fracture occurred on the basal plane. In CoSi2 the {001}<100> slip was only activated at ambient temperatures but addition of Ni activated {110}<110> slip as secondary slip system and improved the ductility. The creep behavior of MoSi2 and CrSi2 single crystals were also investigated and was found to be controlled by the viscous and glide motion of dislocations.


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