The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire

1995 ◽  
Vol 24 (11) ◽  
pp. 1519-1523 ◽  
Author(s):  
S. D. Hersee ◽  
J. Ramer ◽  
K. Zheng ◽  
C. Kranenberg ◽  
K. Malloy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness

Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

2002 ◽  
Vol 92 (11) ◽  
pp. 6880-6885 ◽  
Author(s):  
S. W. Lee ◽  
H. C. Chen ◽  
L. J. Chen ◽  
Y. H. Peng ◽  
C. H. Kuan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Buffer Layer Thickness

Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits

1997 ◽  
Vol 44 (6) ◽  
pp. 2298-2305 ◽  
Author(s):  
T.R. Weatherford ◽  
P.W. Marshall ◽  
C.J. Marshall ◽  
D.J. Fouts ◽  
B. Mathes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Buffer Layer Thickness

Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
A. M. Sanchez ◽  
P. Ruterana ◽  
P. Vennegues ◽  
F. Semond ◽  
F. J. Pacheco ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layers ◽  
Nucleation Layer ◽  
Buffer Layer Thickness ◽  
Aln Buffer

ABSTRACTIn this work it is shown that thin AlN buffer layers cause N-polarity GaN epilayers, with a high inversion domains density. When the AlN thickness increases, the polarity of the epilayer changes to Ga. The use of a low temperature AlN nucleation layer leads to a flat AlN/Si(111) interface. This contributes to decrease the inversion domains density in the overgrown GaN epilayer with a Ga polarity.

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

Langmuir ◽  
2017 ◽  
Vol 33 (19) ◽  
pp. 4654-4665 ◽  
Author(s):  
Sk. Ziaur Rahaman ◽  
Yu-De Lin ◽  
Heng-Yuan Lee ◽  
Yu-Sheng Chen ◽  
Pang-Shiu Chen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Resistive Switching ◽  
Hafnium Oxide ◽  
Buffer Layer Thickness

Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE

2003 ◽  
Vol 250 (1-2) ◽  
pp. 29-33 ◽  
Author(s):  
N Gopalakrishnan ◽  
K Baskar ◽  
H Kawanami ◽  
I Sakata
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Gaas On Si ◽  
Buffer Layer Thickness

The role of Ni buffer layer on high yield low temperature hermetic wafer bonding using In/Sn/Cu metallization

2009 ◽  
Vol 94 (3) ◽  
pp. 034105 ◽  
Author(s):  
Da-Quan Yu ◽  
Chengkuo Lee ◽  
Li Ling Yan ◽  
Won Kyoung Choi ◽  
Aibin Yu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Wafer Bonding ◽  
High Yield ◽  
Cu Metallization

Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire

2008 ◽  
Vol 93 (1) ◽  
pp. 011901 ◽  
Author(s):  
Z. H. Wu ◽  
A. M. Fischer ◽  
F. A. Ponce ◽  
T. Yokogawa ◽  
S. Yoshida ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Basal Plane ◽  
Stacking Faults ◽  
Buffer Layer Thickness
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