Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits

1997 ◽  
Vol 44 (6) ◽  
pp. 2298-2305 ◽  
Author(s):  
T.R. Weatherford ◽  
P.W. Marshall ◽  
C.J. Marshall ◽  
D.J. Fouts ◽  
B. Mathes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Buffer Layer Thickness

Influence of buffer layer thickness and epilayer’s growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD

2011 ◽  
Vol 151 (12) ◽  
pp. 904-907 ◽  
Author(s):  
Xia Liu ◽  
Hang Song ◽  
Guoqing Miao ◽  
Hong Jiang ◽  
Lianzhen Cao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Buffer Layer Thickness

Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

2002 ◽  
Vol 92 (11) ◽  
pp. 6880-6885 ◽  
Author(s):  
S. W. Lee ◽  
H. C. Chen ◽  
L. J. Chen ◽  
Y. H. Peng ◽  
C. H. Kuan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Buffer Layer Thickness

Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
A. M. Sanchez ◽  
P. Ruterana ◽  
P. Vennegues ◽  
F. Semond ◽  
F. J. Pacheco ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layers ◽  
Nucleation Layer ◽  
Buffer Layer Thickness ◽  
Aln Buffer

ABSTRACTIn this work it is shown that thin AlN buffer layers cause N-polarity GaN epilayers, with a high inversion domains density. When the AlN thickness increases, the polarity of the epilayer changes to Ga. The use of a low temperature AlN nucleation layer leads to a flat AlN/Si(111) interface. This contributes to decrease the inversion domains density in the overgrown GaN epilayer with a Ga polarity.

Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD

2008 ◽  
Vol 466 (1-2) ◽  
pp. 507-511
Author(s):  
Shuzhen Yu ◽  
Guoqing Miao ◽  
Jianchun Xie ◽  
Yixin Jin ◽  
Tiemin Zhang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Buffer Layer Thickness

Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE

2003 ◽  
Vol 250 (1-2) ◽  
pp. 29-33 ◽  
Author(s):  
N Gopalakrishnan ◽  
K Baskar ◽  
H Kawanami ◽  
I Sakata
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Gaas On Si ◽  
Buffer Layer Thickness

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

Effect of Buffer Layer Thickness on the Growth Properties of Hydrothermally Grown ZnO Nanorods

2011 ◽  
Vol 11 (2) ◽  
pp. 1409-1412 ◽  
Author(s):  
Ah Ra Kim ◽  
Ju-Young Lee ◽  
Bo Ra Jang ◽  
Hong Seung Kim ◽  
Young Ji Cho ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Zno Nanorods ◽  
Growth Properties ◽  
Buffer Layer Thickness

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

2010 ◽  
Vol 19 (3) ◽  
pp. 036801 ◽  
Author(s):  
Wu Yu-Xin ◽  
Zhu Jian-Jun ◽  
Chen Gui-Feng ◽  
Zhang Shu-Ming ◽  
Jiang De-Sheng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Structural Properties ◽  
Buffer Layer Thickness ◽  
Aln Buffer
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