The role of Ni buffer layer on high yield low temperature hermetic wafer bonding using In/Sn/Cu metallization

2009 ◽  
Vol 94 (3) ◽  
pp. 034105 ◽  
Author(s):  
Da-Quan Yu ◽  
Chengkuo Lee ◽  
Li Ling Yan ◽  
Won Kyoung Choi ◽  
Aibin Yu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Wafer Bonding ◽  
High Yield ◽  
Cu Metallization

Commercial-off-the-Shelf (COTS) 3D Integration using Low Temperature Wafer Bonding

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 000836-000858 ◽  
Author(s):  
Sang Hwui Lee ◽  
Michael Khbeis
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
High Yield ◽  
Activation Process ◽  
Wafer Level ◽  
3D Integration ◽  
Release Process ◽  
Adhesive Film ◽  
Die Set ◽  
Commercial Off The Shelf

This paper reports on a successful 3D integration (3DI) of multi-purpose signal processor (MSP) chips with memory chips using die-to-wafer (D2W) and wafer-to-wafer (W2W) bonding technologies. 3D integration enables compact systems of commercial-off-the-shelf (COTS) parts with high functionality using a wafer-level process for better thinning process uniformity and high yield throughput. The3D system is comprised of commercial Flash memory bare die and MSP bare die. The bare die are face-down aligned to a 150mm diameter silicon handle wafer with alignment marks polished silicon surface. Unique features on the commercial die are detected and used for die registration using a flip-chip bonder with vision automation. An adhesive film between the die and silicon handle wafer are used for temporary bonding. After the die-to-wafer population and bonding, the die substrates are thinned at the wafer-level to a target of 60 microns for the memory die and 25 microns for the MSP die, respectively. The thinned memory die set is permanently transferred onto a 150mm diameter silicon carrier wafer using a low temperature silicon covalent wafer bonding. Following bonding, an adhesive film release process is used to separate the memory die set from the temporary handle wafer. The thinned MSP die on a second handle wafer are then aligned to the thinned memory die set using a wafer-to-wafer alignment tool, and bonded with thin-film polyimide in a high-yield, low temperature wafer bonding process, followed by the release process to separate the MSP die set from the handle wafer. Finally, the MSP/memory stack are electrically connected using a via-last through-silicon-via (TSV) process. One of the key considerations for COTS 3DI is to meet the back-end-of-line (BEOL) thermal budgets of 350–400 Celsius. Plasma-assisted preparation facilitates the reduction in thermal budget for silicon covalent bonding and is performed at 150 Celsius, followed by a long-term annealing process at 175 Celsius. Stacking of thinned die relies on low temperature polyimide bonding that is performed at 200 Celsius. Fluorine and oxygen based plasma surface activation process and CTE-matched polyimide bonding play a critical role in enabling the low temperature bonding for this 3D MSP/memory integration. The thinning and bonding processing details that are presented in this paper are essential for COTS 3DI but can also be applied to several low-profile multi-chip module and packaging applications.

The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire

1995 ◽  
Vol 24 (11) ◽  
pp. 1519-1523 ◽  
Author(s):  
S. D. Hersee ◽  
J. Ramer ◽  
K. Zheng ◽  
C. Kranenberg ◽  
K. Malloy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness

Analytical electron microscopy of grain boundaries in Al-Cu metallizations

1992 ◽  
Vol 50 (2) ◽  
pp. 1684-1685
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Mode ◽  
Current Density ◽  
Thermal History ◽  
Analytical Electron Microscopy ◽  
Cu Metallization ◽  
Analytical Electron ◽  
Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

2015 ◽  
Vol 45 (2) ◽  
pp. 859-866 ◽  
Author(s):  
Wei-Ching Huang ◽  
Chung-Ming Chu ◽  
Chi-Feng Hsieh ◽  
Yuen-Yee Wong ◽  
Kai-wei Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Material Properties ◽  
Double Step ◽  
Nucleation Layer ◽  
Aln Buffer

scholarly journals Dissecting the Roles of Cuticular Wax in Plant Resistance to Shoot Dehydration and Low-Temperature Stress in Arabidopsis

2021 ◽  
Vol 22 (4) ◽  
pp. 1554
Author(s):  
Tawhidur Rahman ◽  
Mingxuan Shao ◽  
Shankar Pahari ◽  
Prakash Venglat ◽  
Raju Soolanayakanahally ◽  
...  
Keyword(s):  
Fatty Acids ◽  
Low Temperature ◽  
Cold Acclimation ◽  
Water Loss ◽  
Cuticular Wax ◽  
Dehydration Stress ◽  
Wax Deposition ◽  
Cuticular Waxes ◽  
Gas Chromatography Mass Spectroscopy

Cuticular waxes are a mixture of hydrophobic very-long-chain fatty acids and their derivatives accumulated in the plant cuticle. Most studies define the role of cuticular wax largely based on reducing nonstomatal water loss. The present study investigated the role of cuticular wax in reducing both low-temperature and dehydration stress in plants using Arabidopsis thaliana mutants and transgenic genotypes altered in the formation of cuticular wax. cer3-6, a known Arabidopsis wax-deficient mutant (with distinct reduction in aldehydes, n-alkanes, secondary n-alcohols, and ketones compared to wild type (WT)), was most sensitive to water loss, while dewax, a known wax overproducer (greater alkanes and ketones compared to WT), was more resistant to dehydration compared to WT. Furthermore, cold-acclimated cer3-6 froze at warmer temperatures, while cold-acclimated dewax displayed freezing exotherms at colder temperatures compared to WT. Gas Chromatography-Mass Spectroscopy (GC-MS) analysis identified a characteristic decrease in the accumulation of certain waxes (e.g., alkanes, alcohols) in Arabidopsis cuticles under cold acclimation, which was additionally reduced in cer3-6. Conversely, the dewax mutant showed a greater ability to accumulate waxes under cold acclimation. Fourier Transform Infrared Spectroscopy (FTIR) also supported observations in cuticular wax deposition under cold acclimation. Our data indicate cuticular alkane waxes along with alcohols and fatty acids can facilitate avoidance of both ice formation and leaf water loss under dehydration stress and are promising genetic targets of interest.

The Role of Li2CO3and PbO in the Low-Temperature Sintering of Sr, K, Nb (SKN)-Doped PZT

2009 ◽  
Vol 92 (6) ◽  
pp. 1203-1207 ◽  
Author(s):  
Niall J. Donnelly ◽  
Thomas R. Shrout ◽  
Clive A. Randall
Keyword(s):  
Low Temperature ◽  
Low Temperature Sintering
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